Abstract
The adsorption of hydrogen on Ge(001) has been studied with scanning tunneling microscopy at 77 K. For low doses (100 L) a variety of adsorption structures has been found. We have found two different atomic configurations for the Ge-Ge-H hemihydride and a third configuration that is most likely induced by the dissociative adsorption of molecular hydrogen. The Ge-Ge-H hemihydride is either buckled antiparallel or parallel to the neighboring Ge-Ge dimers. The latter configuration has recently been predicted by M. W. Radny et al. [J. Chem. Phys. 128, 244707 (2008)], but not observed experimentally yet. Due to the presence of phasons some dimer rows appear highly dynamic.
Original language | Undefined |
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Pages (from-to) | 153402- |
Number of pages | 4 |
Journal | Physical review B: Condensed matter and materials physics |
Volume | 79 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- Elemental semiconductors
- dissociation
- Adsorption
- IR-61340
- Germanium
- Scanning tunnelling microscopy
- METIS-257014
- Hydrogen