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Abstract
The adsorption of hydrogen on Ge(001) has been studied with scanning tunneling microscopy at 77 K. For low doses (100 L) a variety of adsorption structures has been found. We have found two different atomic configurations for the Ge-Ge-H hemihydride and a third configuration that is most likely induced by the dissociative adsorption of molecular hydrogen. The Ge-Ge-H hemihydride is either buckled antiparallel or parallel to the neighboring Ge-Ge dimers. The latter configuration has recently been predicted by M. W. Radny et al. [J. Chem. Phys. 128, 244707 (2008)], but not observed experimentally yet. Due to the presence of phasons some dimer rows appear highly dynamic.
| Original language | English |
|---|---|
| Pages (from-to) | 153402- |
| Number of pages | 4 |
| Journal | Physical review B: Condensed matter and materials physics |
| Volume | 79 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2009 |
Keywords
- Elemental semiconductors
- Dissociation
- Adsorption
- Germanium
- Scanning tunnelling microscopy
- Hydrogen
- 2024 OA procedure
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Dive into the research topics of 'Hydrogen adsorption configurations on Ge(001)probed with STM'. Together they form a unique fingerprint.Research output
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Hydrogen adsorption configurations on Ge(001) probed with STM
Saedi, A., Poelsema, B. & Zandvliet, H. J. W., 16 Mar 2010. 1 p.Research output: Contribution to conference › Poster › Other research output
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