Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

M. Morales-Masis*, L. Ding, F. Dauzou, Q. Jeangros, A. Hessler-Wyser, S. Nicolay, C. Ballif

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

28 Citations (Scopus)
7 Downloads (Pure)

Abstract

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.
Original languageEnglish
Article number096113
JournalAPL materials
Volume2
Issue number9
DOIs
Publication statusPublished - 2014
Externally publishedYes

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