Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene

Zhenping Wang; Qirong Yao; Christof Neumann; Felix Börrnert; Julian Renner; Ute Kaiser; Andrey Turchanin; Harold J.W. Zandvliet; Siegfried Eigler

doi:10.1002/anie.202004005

Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene

Zhenping Wang, Qirong Yao, Christof Neumann, Felix Börrnert, Julian Renner, Ute Kaiser, Andrey Turchanin, Harold J.W. Zandvliet, Siegfried Eigler^*

^*Corresponding author for this work

Physics of Interfaces and Nanomaterials

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp³-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp³-separated sp²-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp³-patches confine conjugated sp²-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp³-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.

Original language	English
Pages (from-to)	13657-13662
Number of pages	6
Journal	Angewandte Chemie - International Edition
Volume	59
Issue number	32
Early online date	21 Apr 2020
DOIs	https://doi.org/10.1002/anie.202004005
Publication status	Published - 3 Aug 2020

Keywords

electrical transport properties
graphene oxide
microscopy
oxo-functionalized graphene
semiconductors

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Wang-2020-Identification-of-semiconductive-paFinal published version, 3.82 MBLicence: CC BY

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title = "Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene",

abstract = "The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp3-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp3-separated sp2-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3-patches confine conjugated sp2-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.",

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AU - Renner, Julian

AU - Kaiser, Ute

AU - Turchanin, Andrey

AU - Zandvliet, Harold J.W.

AU - Eigler, Siegfried

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N2 - The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp3-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp3-separated sp2-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3-patches confine conjugated sp2-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.

AB - The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp3-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp3-separated sp2-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3-patches confine conjugated sp2-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.

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Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene

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Identifizierung von halbleitenden Bereichen in thermisch behandeltem monolagigem Oxo-funktionalisiertem Graphen

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