TY - JOUR
T1 - Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene
AU - Wang, Zhenping
AU - Yao, Qirong
AU - Neumann, Christof
AU - Börrnert, Felix
AU - Renner, Julian
AU - Kaiser, Ute
AU - Turchanin, Andrey
AU - Zandvliet, Harold J.W.
AU - Eigler, Siegfried
PY - 2020/8/3
Y1 - 2020/8/3
N2 - The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp3-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp3-separated sp2-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3-patches confine conjugated sp2-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.
AB - The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp3-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp3-separated sp2-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3-patches confine conjugated sp2-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.
KW - electrical transport properties
KW - graphene oxide
KW - microscopy
KW - oxo-functionalized graphene
KW - semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85085573537&partnerID=8YFLogxK
U2 - 10.1002/anie.202004005
DO - 10.1002/anie.202004005
M3 - Article
C2 - 32315109
AN - SCOPUS:85085573537
VL - 59
SP - 13657
EP - 13662
JO - Angewandte Chemie (international edition)
JF - Angewandte Chemie (international edition)
SN - 1433-7851
IS - 32
ER -