Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo-Functionalized Graphene

Zhenping Wang, Qirong Yao, Christof Neumann, Felix Börrnert, Julian Renner, Ute Kaiser, Andrey Turchanin, Harold J.W. Zandvliet, Siegfried Eigler*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
16 Downloads (Pure)

Abstract

The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo-functionalized graphene (oxo-G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo-G flake and correlated the chemical composition and topography corrugation by two-probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo-G, processed at 300 °C, displays C−C sp3-patches and possibly C−O−C bonds, next to graphene domains and holes. It is striking that those C−O−C/C−C sp3-separated sp2-patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3-patches confine conjugated sp2-C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3-C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications.

Original languageEnglish
Pages (from-to)13657-13662
Number of pages6
JournalAngewandte Chemie - International Edition
Volume59
Issue number32
Early online date21 Apr 2020
DOIs
Publication statusPublished - 3 Aug 2020

Keywords

  • electrical transport properties
  • graphene oxide
  • microscopy
  • oxo-functionalized graphene
  • semiconductors

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