Identifying degradation mechanisms in RF MEMS capacitive switches

R.W. Herfst, P.G. Steeneken, Jurriaan Schmitz

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    Abstract

    In this paper we demonstrate how different degradation mechanisms of RF MEMS capacitive switches can be identified by carefully examining changes in key aspects of the measured C-V curves. We show that C-V curve narrowing can occur either due to mechanical deformation or to laterally inhomogeneous dielectric charging. We also show how these two degradation mechanisms can be distinguished by monitoring the change in the pull-in and pull-out voltages. Our measurements indicate that both degradation mechanisms do indeed occur in practice, depending on the stress conditions.
    Original languageUndefined
    Title of host publicationProceedings of the 21st IEEE International Conference on Micro Electro Mechanical Systems
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages168-171
    Number of pages4
    ISBN (Print)978-1-4244-1793-3
    DOIs
    Publication statusPublished - 13 Jan 2008
    Event21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008 - Tucson, United States
    Duration: 13 Jan 200817 Jan 2008
    Conference number: 21

    Publication series

    Name
    PublisherIEEE Computer Society Press
    NumberDTR08-9

    Conference

    Conference21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008
    Abbreviated titleMEMS
    CountryUnited States
    CityTucson
    Period13/01/0817/01/08

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • IR-62385
    • METIS-251072
    • EWI-13049

    Cite this

    Herfst, R. W., Steeneken, P. G., & Schmitz, J. (2008). Identifying degradation mechanisms in RF MEMS capacitive switches. In Proceedings of the 21st IEEE International Conference on Micro Electro Mechanical Systems (pp. 168-171). [10.1109/MEMSYS.2008.4443619] Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/MEMSYS.2008.4443619