Identifying degradation mechanisms in RF MEMS capacitive switches

R.W. Herfst, P.G. Steeneken, Jurriaan Schmitz

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    In this paper we demonstrate how different degradation mechanisms of RF MEMS capacitive switches can be identified by carefully examining changes in key aspects of the measured C-V curves. We show that C-V curve narrowing can occur either due to mechanical deformation or to laterally inhomogeneous dielectric charging. We also show how these two degradation mechanisms can be distinguished by monitoring the change in the pull-in and pull-out voltages. Our measurements indicate that both degradation mechanisms do indeed occur in practice, depending on the stress conditions.
    Original languageUndefined
    Title of host publicationProceedings of the 21st IEEE International Conference on Micro Electro Mechanical Systems
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Number of pages4
    ISBN (Print)978-1-4244-1793-3
    Publication statusPublished - 13 Jan 2008
    Event21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008 - Tucson, United States
    Duration: 13 Jan 200817 Jan 2008
    Conference number: 21

    Publication series

    PublisherIEEE Computer Society Press


    Conference21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008
    Abbreviated titleMEMS
    Country/TerritoryUnited States


    • SC-ICRY: Integrated Circuit Reliability and Yield
    • IR-62385
    • METIS-251072
    • EWI-13049

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