Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers

Tihomir Knezevic; Lis K. Nanver

doi:10.1109/ICMTS55420.2023.10094164

Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers

Tihomir Knezevic^*, Lis K. Nanver

^*Corresponding author for this work

Integrated Devices and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In silicon technology, Schottky diodes mainly exhibit high current levels, and attempts are regularly made to reduce these by introducing 2D layers between the metal contact and the silicon. Defects in such interfacial layers, from weakly bonded structures to actual pinholes, can lead to high, localized metal-semiconductor Schottky currents. Using the example of diodes with an interfacial layer of pure boron (PureB) between an aluminum metallization layer and the Si, a signature for such ''nano-Schottky's'' is determined by evaluating the results of several different test-structure arrays and measurement techniques. An adapted bipolar-Type measurement is introduced as an additional method to determine whether any high current characteristics originate from a low Schottky barrier height over the entire diode surface or from a localized nano-Schottky structure.

Original language	English
Title of host publication	2023 35th International Conference on Microelectronic Test Structure (ICMTS)
Publisher	IEEE
Number of pages	6
ISBN (Electronic)	979-8-3503-4653-4, 979-8-3503-4652-7
ISBN (Print)	979-8-3503-4654-1
DOIs	https://doi.org/10.1109/ICMTS55420.2023.10094164
Publication status	Published - 10 Apr 2023
Event	35th International Conference on Microelectronic Test Structure, ICMTS 2023 - Tokyo, Japan Duration: 27 Mar 2023 → 30 Mar 2023 Conference number: 35

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2023-March

Conference

Conference	35th International Conference on Microelectronic Test Structure, ICMTS 2023
Abbreviated title	ICMTS 2023
Country/Territory	Japan
City	Tokyo
Period	27/03/23 → 30/03/23

Keywords

2D interfacial layers
bipolar devices
diode characterization
nanoSchottky
pure boron

Access to Document

10.1109/ICMTS55420.2023.10094164

Cite this

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title = "Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers",

abstract = "In silicon technology, Schottky diodes mainly exhibit high current levels, and attempts are regularly made to reduce these by introducing 2D layers between the metal contact and the silicon. Defects in such interfacial layers, from weakly bonded structures to actual pinholes, can lead to high, localized metal-semiconductor Schottky currents. Using the example of diodes with an interfacial layer of pure boron (PureB) between an aluminum metallization layer and the Si, a signature for such ''nano-Schottky's'' is determined by evaluating the results of several different test-structure arrays and measurement techniques. An adapted bipolar-Type measurement is introduced as an additional method to determine whether any high current characteristics originate from a low Schottky barrier height over the entire diode surface or from a localized nano-Schottky structure.",

keywords = "2D interfacial layers, bipolar devices, diode characterization, nanoSchottky, pure boron",

author = "Tihomir Knezevic and Nanver, {Lis K.}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by the B-Power Project No. 17979 of The Netherlands Organization for Scientific Research (NWO) Domain Applied and Engineering Sciences (TTW, and the Croatian Science Foundation under the project IP-2018-01-5296. Publisher Copyright: {\textcopyright} 2023 IEEE.; 35th International Conference on Microelectronic Test Structure, ICMTS 2023, ICMTS 2023 ; Conference date: 27-03-2023 Through 30-03-2023",

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doi = "10.1109/ICMTS55420.2023.10094164",

language = "English",

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Knezevic, T & Nanver, LK 2023, Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers. in 2023 35th International Conference on Microelectronic Test Structure (ICMTS). IEEE International Conference on Microelectronic Test Structures, vol. 2023-March, IEEE, 35th International Conference on Microelectronic Test Structure, ICMTS 2023, Tokyo, Japan, 27/03/23. https://doi.org/10.1109/ICMTS55420.2023.10094164

Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers. / Knezevic, Tihomir; Nanver, Lis K.
2023 35th International Conference on Microelectronic Test Structure (ICMTS). IEEE, 2023. (IEEE International Conference on Microelectronic Test Structures; Vol. 2023-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers

AU - Knezevic, Tihomir

AU - Nanver, Lis K.

N1 - Conference code: 35

PY - 2023/4/10

Y1 - 2023/4/10

N2 - In silicon technology, Schottky diodes mainly exhibit high current levels, and attempts are regularly made to reduce these by introducing 2D layers between the metal contact and the silicon. Defects in such interfacial layers, from weakly bonded structures to actual pinholes, can lead to high, localized metal-semiconductor Schottky currents. Using the example of diodes with an interfacial layer of pure boron (PureB) between an aluminum metallization layer and the Si, a signature for such ''nano-Schottky's'' is determined by evaluating the results of several different test-structure arrays and measurement techniques. An adapted bipolar-Type measurement is introduced as an additional method to determine whether any high current characteristics originate from a low Schottky barrier height over the entire diode surface or from a localized nano-Schottky structure.

AB - In silicon technology, Schottky diodes mainly exhibit high current levels, and attempts are regularly made to reduce these by introducing 2D layers between the metal contact and the silicon. Defects in such interfacial layers, from weakly bonded structures to actual pinholes, can lead to high, localized metal-semiconductor Schottky currents. Using the example of diodes with an interfacial layer of pure boron (PureB) between an aluminum metallization layer and the Si, a signature for such ''nano-Schottky's'' is determined by evaluating the results of several different test-structure arrays and measurement techniques. An adapted bipolar-Type measurement is introduced as an additional method to determine whether any high current characteristics originate from a low Schottky barrier height over the entire diode surface or from a localized nano-Schottky structure.

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KW - bipolar devices

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KW - pure boron

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Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers

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