Impact of hot-carrier degradation on the Low-Frequency Noise in MOSFETs under steady-state and periodic Large-Signal Excitation

Jay Kolhatkar, Eric Hoekstra, André Hof, Cora Salm, Jurriaan Schmitz, Hans Wallinga

    Research output: Contribution to journalArticleAcademicpeer-review

    5 Citations (Scopus)

    Abstract

    This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.
    Original languageEnglish
    Pages (from-to)764-766
    Number of pages3
    JournalIEEE electron device letters
    Volume26
    Issue number10
    DOIs
    Publication statusPublished - 1 Oct 2005

    Keywords

    • Periodic large-signal excitation
    • Low frequency noise
    • Hot-carrier degradation
    • MOSFETs

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