Impact of hot-carrier degradation on the Low-Frequency Noise in MOSFETs under steady-state and periodic Large-Signal Excitation

Jay Kolhatkar; Eric Hoekstra; André Hof; Cora Salm; Jurriaan Schmitz; Hans Wallinga

doi:10.1109/LED.2005.856009

Impact of hot-carrier degradation on the Low-Frequency Noise in MOSFETs under steady-state and periodic Large-Signal Excitation

Jay Kolhatkar, Eric Hoekstra, André Hof, Cora Salm, Jurriaan Schmitz, Hans Wallinga

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Abstract

This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

Original language	English
Pages (from-to)	764-766
Number of pages	3
Journal	IEEE electron device letters
Volume	26
Issue number	10
DOIs	https://doi.org/10.1109/LED.2005.856009
Publication status	Published - 1 Oct 2005

Keywords

Periodic large-signal excitation
Low frequency noise
Hot-carrier degradation
MOSFETs

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10.1109/LED.2005.856009

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title = "Impact of hot-carrier degradation on the Low-Frequency Noise in MOSFETs under steady-state and periodic Large-Signal Excitation",

abstract = "This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.",

keywords = "Periodic large-signal excitation, Low frequency noise, Hot-carrier degradation, MOSFETs",

author = "Jay Kolhatkar and Eric Hoekstra and Andr{\'e} Hof and Cora Salm and Jurriaan Schmitz and Hans Wallinga",

year = "2005",

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T1 - Impact of hot-carrier degradation on the Low-Frequency Noise in MOSFETs under steady-state and periodic Large-Signal Excitation

AU - Kolhatkar, Jay

AU - Hoekstra, Eric

AU - Hof, André

AU - Salm, Cora

AU - Schmitz, Jurriaan

AU - Wallinga, Hans

PY - 2005/10/1

Y1 - 2005/10/1

N2 - This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

AB - This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

KW - Periodic large-signal excitation

KW - Low frequency noise

KW - Hot-carrier degradation

KW - MOSFETs

U2 - 10.1109/LED.2005.856009

DO - 10.1109/LED.2005.856009

M3 - Article

SN - 0741-3106

VL - 26

SP - 764

EP - 766

JO - IEEE electron device letters

JF - IEEE electron device letters

IS - 10

ER -

Impact of hot-carrier degradation on the Low-Frequency Noise in MOSFETs under steady-state and periodic Large-Signal Excitation

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Keywords

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