Impact of interface charge on the electrostatics of field-plate assisted RESURF devices

B.K. Boksteen, A. Ferrara, A. Heringa, P.G. Steeneken, Raymond Josephus Engelbart Hueting

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    3 Citations (Scopus)

    Abstract

    A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∿λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.
    Original languageUndefined
    Pages (from-to)2859-2866
    Number of pages8
    JournalIEEE transactions on electron devices
    Volume61
    Issue number8
    DOIs
    Publication statusPublished - 30 Jun 2014

    Keywords

    • EWI-24848
    • IR-91375
    • METIS-305918
    • ElectrostaticsFinFEThigh-voltagehotcarrier-induced charge injection (HCI)interface chargejunctionless transistorreduced surface field (RESURF)SOI

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