Impact of interface charge on the electrostatics of field-plate assisted RESURF devices

B.K. Boksteen; A. Ferrara; A. Heringa; P.G. Steeneken; Raymond Josephus Engelbart Hueting

doi:10.1109/TED.2014.2327574

Impact of interface charge on the electrostatics of field-plate assisted RESURF devices

B.K. Boksteen, A. Ferrara, A. Heringa, P.G. Steeneken, Raymond Josephus Engelbart Hueting

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

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Abstract

A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∿λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.

Original language	Undefined
Pages (from-to)	2859-2866
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	8
DOIs	https://doi.org/10.1109/TED.2014.2327574
Publication status	Published - 30 Jun 2014

Keywords

EWI-24848
IR-91375
METIS-305918
ElectrostaticsFinFEThigh-voltagehotcarrier-induced charge injection (HCI)interface chargejunctionless transistorreduced surface field (RESURF)SOI

Access to Document

10.1109/TED.2014.2327574

http://eprints.eemcs.utwente.nl/secure2/24848/01/ted_boksteen.pdf

Cite this

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title = "Impact of interface charge on the electrostatics of field-plate assisted RESURF devices",

abstract = "A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∿λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.",

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author = "B.K. Boksteen and A. Ferrara and A. Heringa and P.G. Steeneken and Hueting, {Raymond Josephus Engelbart}",

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T1 - Impact of interface charge on the electrostatics of field-plate assisted RESURF devices

AU - Boksteen, B.K.

AU - Ferrara, A.

AU - Heringa, A.

AU - Steeneken, P.G.

AU - Hueting, Raymond Josephus Engelbart

N1 - This article has been accepted for inclusion in a future issue of this journal. Content is final as presented

PY - 2014/6/30

Y1 - 2014/6/30

N2 - A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∿λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.

AB - A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∿λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.

KW - EWI-24848

KW - IR-91375

KW - METIS-305918

KW - ElectrostaticsFinFEThigh-voltagehotcarrier-induced charge injection (HCI)interface chargejunctionless transistorreduced surface field (RESURF)SOI

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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