Impact of ion implantation statistics on VT fluctuations in MOSFETs: Comparison between decaborane and boron channel implants

Hans Tuinhout*, Frans Widdershoven, Peter Stolk, Jurriaan Schmitz, Bert Dirks, Karel van der Tak, Pascal Bancken, Jarich Politiek

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)
1 Downloads (Pure)

Abstract

The contribution of ion implantation statistics to VT fluctuations is demonstrated. An increase of statistical VT fluctuations due to enhanced dopant fluctuations when the channel region of a MOSFET is implanted using B10H14 as compared to those with conventional boron implanted channels is analyzed. Results are verified through the comparison of fluctuation enhancements as predicted by the model with measured VT fluctuations as a functions of the substrate bias. To reduce the influence of most of the mentioned other fluctuation sources, these additional factors are the same for a conventional B type population as for the B10H14 type on the same wafer.

Original languageEnglish
Title of host publication2000 Symposium on VLSI Technology
Subtitle of host publicationdigest of technical papers : June 13-15, 2000, Honolulu
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages134-135
Number of pages2
ISBN (Print)0-7803-6305-1, 0-7803-6306-X
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event2000 Symposium on VLSI Technology - Hilton Hawaiian, Honolulu, United States
Duration: 13 Jun 200015 Jun 2000

Publication series

NameSymposium on VLSI Technology: Digest of Technical Papers
PublisherIEEE
Volume2000
ISSN (Print)0743-1562

Conference

Conference2000 Symposium on VLSI Technology
CountryUnited States
CityHonolulu
Period13/06/0015/06/00

Fingerprint

Dive into the research topics of 'Impact of ion implantation statistics on V<sub>T</sub> fluctuations in MOSFETs: Comparison between decaborane and boron channel implants'. Together they form a unique fingerprint.

Cite this