@inproceedings{dea783b94b30451cbfce2341cad01a42,
title = "Impact of ion implantation statistics on VT fluctuations in MOSFETs: Comparison between decaborane and boron channel implants",
abstract = "The contribution of ion implantation statistics to VT fluctuations is demonstrated. An increase of statistical VT fluctuations due to enhanced dopant fluctuations when the channel region of a MOSFET is implanted using B10H14 as compared to those with conventional boron implanted channels is analyzed. Results are verified through the comparison of fluctuation enhancements as predicted by the model with measured VT fluctuations as a functions of the substrate bias. To reduce the influence of most of the mentioned other fluctuation sources, these additional factors are the same for a conventional B type population as for the B10H14 type on the same wafer.",
author = "Hans Tuinhout and Frans Widdershoven and Peter Stolk and Jurriaan Schmitz and Bert Dirks and {van der Tak}, Karel and Pascal Bancken and Jarich Politiek",
year = "2000",
doi = "10.1109/VLSIT.2000.852799",
language = "English",
isbn = "0-7803-6305-1",
series = "Symposium on VLSI Technology: Digest of Technical Papers",
publisher = "IEEE",
pages = "134--135",
booktitle = "2000 Symposium on VLSI Technology",
address = "United States",
note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",
}