Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

M.S.B. Sowariraj; F.G. Kuper; Cora Salm; A.J. Mouthaan; T Smedes

Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

M.S.B. Sowariraj, F.G. Kuper, Cora Salm, A.J. Mouthaan, T Smedes

Research output: Contribution to conference › Paper

Abstract

In this paper we present a systematic study on the effect of process and layout variation for groundedgate NMOSTs and LVTSCRs in a 0.18m technology under negative non-socketed Charged Device Model (CDM) stress. A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance of LVTSCRs can be as good as that of ggNMOSTs under CDM stresses.

Original language	Undefined
Pages	104-107
Number of pages	4
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

Keywords

CDM
non-socketed CDM stress
IR-67768
EWI-15600
LVTSCR

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15600/01/sowariraj.pdf

Cite this

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title = "Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs",

abstract = "In this paper we present a systematic study on the effect of process and layout variation for groundedgate NMOSTs and LVTSCRs in a 0.18m technology under negative non-socketed Charged Device Model (CDM) stress. A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance of LVTSCRs can be as good as that of ggNMOSTs under CDM stresses.",

keywords = "CDM, non-socketed CDM stress, IR-67768, EWI-15600, LVTSCR",

author = "M.S.B. Sowariraj and F.G. Kuper and Cora Salm and A.J. Mouthaan and T Smedes",

year = "2002",

month = nov,

day = "27",

language = "Undefined",

pages = "104--107",

note = "null ; Conference date: 27-11-2002 Through 28-11-2002",

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Sowariraj, MSB, Kuper, FG, Salm, C, Mouthaan, AJ & Smedes, T 2002, 'Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs', Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands, 27/11/02 - 28/11/02 pp. 104-107. <http://eprints.eemcs.utwente.nl/secure2/15600/01/sowariraj.pdf>

TY - CONF

T1 - Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs

AU - Sowariraj, M.S.B.

AU - Kuper, F.G.

AU - Salm, Cora

AU - Mouthaan, A.J.

AU - Smedes, T

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - In this paper we present a systematic study on the effect of process and layout variation for groundedgate NMOSTs and LVTSCRs in a 0.18m technology under negative non-socketed Charged Device Model (CDM) stress. A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance of LVTSCRs can be as good as that of ggNMOSTs under CDM stresses.

AB - In this paper we present a systematic study on the effect of process and layout variation for groundedgate NMOSTs and LVTSCRs in a 0.18m technology under negative non-socketed Charged Device Model (CDM) stress. A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance of LVTSCRs can be as good as that of ggNMOSTs under CDM stresses.

KW - CDM

KW - non-socketed CDM stress

KW - IR-67768

KW - EWI-15600

KW - LVTSCR

M3 - Paper

SP - 104

EP - 107

Y2 - 27 November 2002 through 28 November 2002

ER -