Impact of metal-ion contaminated silica particles on gate oxide integrity

Ingrid Rink, F. Wali, D.M. Knotter

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    The impact of metal-ion contamination (present on wafer surface before oxidation) on gate oxide integrity (GOI) is well known in literature, which is not the case for clean silica particles [1, 2]. However, it is known that particles present in ultra-pure water (UPW) decrease the random yield in semiconductor manufacturing [3]. The presence of silica in UPW is common knowledge. UPW has also a certain content of metal ions, which can be attached to silica. That means, when a wafer is in contact with UPW metal ion can directly and/or in form of a silica-metal conglomerate be attached to the wafer surface. That means, it is not known in which form metal-ion contamination will deteriorate GOI the most. In order to receive more clarity in this field a short-loop study was set up, where we want distinguish between the impacts of - low metal ion contamination (Calcium), - clean silica particles (330nm) contamination, - silica particles with metal-ion core (330nm) contamination, and - metal-ion contamination at similar concentration as the metal-ion core of the particles on GOI (uniform and none uniform distribution).
    Original languageUndefined
    Article number10.4028/www.scientific.net/SSP.145-146.131
    Pages (from-to)131-134
    Number of pages4
    JournalSolid state phenomena
    Volume145-146
    Issue number10.4028/www.scientific.net/SSP.145-146.131
    DOIs
    Publication statusPublished - 6 Jan 2009

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • EWI-15053
    • IR-62730
    • METIS-263735

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