Impact of sidewalls on electrical characterization

Deepu Roy; Micha in 't Zandt; Robertus A.M. Wolters

Impact of sidewalls on electrical characterization

Deepu Roy
, Micha in 't Zandt
, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

114 Downloads (Pure)

Abstract

In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed.

Original language	Undefined
Title of host publication	Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	105-107
Number of pages	3
ISBN (Print)	978-90-73461-62-8
Publication status	Published - 26 Nov 2009
Event	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands Duration: 26 Nov 2009 → 27 Nov 2009 Conference number: 12

Publication series

Name
Publisher	Technology Foundation, STW

Conference

Conference	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	26/11/09 → 27/11/09

Keywords

METIS-264277
IR-69088
CBKR structures
phase change material
Van der Pauw
EWI-17074
side walls
Contact resistance

Access to Document

roy

http://eprints.eemcs.utwente.nl/secure2/17074/01/roy.pdf

Cite this

@inproceedings{f4a172c141d143828ce2ed4486fe1011,

title = "Impact of sidewalls on electrical characterization",

abstract = "In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed.",

keywords = "METIS-264277, IR-69088, CBKR structures, phase change material, Van der Pauw, EWI-17074, side walls, Contact resistance",

author = "Deepu Roy and \{in 't Zandt\}, Micha and Wolters, \{Robertus A.M.\}",

year = "2009",

month = nov,

day = "26",

language = "Undefined",

isbn = "978-90-73461-62-8",

publisher = "STW",

pages = "105--107",

booktitle = "Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

note = "12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 ; Conference date: 26-11-2009 Through 27-11-2009",

}

Roy, D, in 't Zandt, M & Wolters, RAM 2009, Impact of sidewalls on electrical characterization. in Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. STW, Utrecht, The Netherlands, pp. 105-107, 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, Veldhoven, Netherlands, 26/11/09. <http://eprints.eemcs.utwente.nl/secure2/17074/01/roy.pdf>

TY - GEN

T1 - Impact of sidewalls on electrical characterization

AU - Roy, Deepu

AU - in 't Zandt, Micha

AU - Wolters, Robertus A.M.

N1 - Conference code: 12

PY - 2009/11/26

Y1 - 2009/11/26

N2 - In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed.

AB - In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed.

KW - METIS-264277

KW - IR-69088

KW - CBKR structures

KW - phase change material

KW - Van der Pauw

KW - EWI-17074

KW - side walls

KW - Contact resistance

M3 - Conference contribution

SN - 978-90-73461-62-8

SP - 105

EP - 107

BT - Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

PB - STW

CY - Utrecht, The Netherlands

T2 - 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009

Y2 - 26 November 2009 through 27 November 2009

ER -