Impact of sidewalls on electrical characterization

Deepu Roy, Micha in 't Zandt, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Abstract

    In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed.
    Original languageUndefined
    Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages105-107
    Number of pages3
    ISBN (Print)978-90-73461-62-8
    Publication statusPublished - 26 Nov 2009
    Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
    Duration: 26 Nov 200927 Nov 2009
    Conference number: 12

    Publication series

    Name
    PublisherTechnology Foundation, STW

    Conference

    Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period26/11/0927/11/09

    Keywords

    • METIS-264277
    • IR-69088
    • CBKR structures
    • phase change material
    • Van der Pauw
    • EWI-17074
    • side walls
    • Contact resistance

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