Impact of small deviations in EEDF on silane-based plasma chemistry

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.
    Original languageUndefined
    Article number10.1149/1.3207622
    Pages (from-to)429-436
    Number of pages8
    JournalECS transactions
    Volume25
    Issue number8
    DOIs
    Publication statusPublished - 2009

    Keywords

    • SC-ICS: Integrated Chemical Sensors
    • IR-67998
    • METIS-264032
    • EWI-16076

    Cite this

    @article{0f70cb6e4a2d4d8fb66d9d0519cb528d,
    title = "Impact of small deviations in EEDF on silane-based plasma chemistry",
    abstract = "In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.",
    keywords = "SC-ICS: Integrated Chemical Sensors, IR-67998, METIS-264032, EWI-16076",
    author = "Kovalgin, {Alexeij Y.} and A. Boogaard and Wolters, {Robertus A.M.}",
    note = "10.1149/1.3207622",
    year = "2009",
    doi = "10.1149/1.3207622",
    language = "Undefined",
    volume = "25",
    pages = "429--436",
    journal = "ECS transactions",
    issn = "1938-5862",
    publisher = "The Electrochemical Society Inc.",
    number = "8",

    }

    Impact of small deviations in EEDF on silane-based plasma chemistry. / Kovalgin, Alexeij Y.; Boogaard, A.; Wolters, Robertus A.M.

    In: ECS transactions, Vol. 25, No. 8, 10.1149/1.3207622, 2009, p. 429-436.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Impact of small deviations in EEDF on silane-based plasma chemistry

    AU - Kovalgin, Alexeij Y.

    AU - Boogaard, A.

    AU - Wolters, Robertus A.M.

    N1 - 10.1149/1.3207622

    PY - 2009

    Y1 - 2009

    N2 - In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.

    AB - In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.

    KW - SC-ICS: Integrated Chemical Sensors

    KW - IR-67998

    KW - METIS-264032

    KW - EWI-16076

    U2 - 10.1149/1.3207622

    DO - 10.1149/1.3207622

    M3 - Article

    VL - 25

    SP - 429

    EP - 436

    JO - ECS transactions

    JF - ECS transactions

    SN - 1938-5862

    IS - 8

    M1 - 10.1149/1.3207622

    ER -