Impact of small deviations in EEDF on silane-based plasma chemistry

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.
Original languageUndefined
Article number10.1149/1.3207622
Pages (from-to)429-436
Number of pages8
JournalECS transactions
Volume25
Issue number8
DOIs
Publication statusPublished - 2009

Keywords

  • SC-ICS: Integrated Chemical Sensors
  • IR-67998
  • METIS-264032
  • EWI-16076

Cite this

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title = "Impact of small deviations in EEDF on silane-based plasma chemistry",
abstract = "In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.",
keywords = "SC-ICS: Integrated Chemical Sensors, IR-67998, METIS-264032, EWI-16076",
author = "Kovalgin, {Alexeij Y.} and A. Boogaard and Wolters, {Robertus A.M.}",
note = "10.1149/1.3207622",
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language = "Undefined",
volume = "25",
pages = "429--436",
journal = "ECS transactions",
issn = "1938-5862",
publisher = "The Electrochemical Society Inc.",
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}

Impact of small deviations in EEDF on silane-based plasma chemistry. / Kovalgin, Alexeij Y.; Boogaard, A.; Wolters, Robertus A.M.

In: ECS transactions, Vol. 25, No. 8, 10.1149/1.3207622, 2009, p. 429-436.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Impact of small deviations in EEDF on silane-based plasma chemistry

AU - Kovalgin, Alexeij Y.

AU - Boogaard, A.

AU - Wolters, Robertus A.M.

N1 - 10.1149/1.3207622

PY - 2009

Y1 - 2009

N2 - In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.

AB - In this work, we emphasize the importance of using a correct Electron Energy Distribution Function (EEDF) to model chemical reactions in High-Density (HD) low-pressure silane-containing plasmas. We have modeled chemical reactions in Ar-SiH4-N2O- (N2-H2-O2) Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon oxide and silicon nitride layers. For the modeling, we used the experimentally measured EEDF, deviating from the Maxwell-Boltzmann (MB) EEDF. We demonstrate that the use of an inappropriate (i.e. MB in our example) EEDF, only slightly deviating from the experimental (i.e. actual) distribution, could lead to significant discrepancies (1-2 orders of magnitude) between the calculated and actual radical densities.

KW - SC-ICS: Integrated Chemical Sensors

KW - IR-67998

KW - METIS-264032

KW - EWI-16076

U2 - 10.1149/1.3207622

DO - 10.1149/1.3207622

M3 - Article

VL - 25

SP - 429

EP - 436

JO - ECS transactions

JF - ECS transactions

SN - 1938-5862

IS - 8

M1 - 10.1149/1.3207622

ER -