Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies

Jerôme Dubois; Johan Knol; Mike Bolt; Hans Tuinhout; Jurriaan Schmitz; Peter Stolk

doi:10.1109/ESSDERC.2002.194883

Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies

Jerôme Dubois^*
, Johan Knol
, Mike Bolt
, Hans Tuinhout
, Jurriaan Schmitz
, Peter Stolk

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

16 Citations (Scopus)

533 Downloads (Pure)

Abstract

A new mechanism causing deterioration of the threshold voltage matching performance of MOSFETs is described. We demonstrate that this effect depends on several fundamental CMOS device architecture aspects such as the source/drain implant energies, the gate layer thickness, a gate top oxide layer thickness and the polysilicon gate morphology. It is concluded that penetration of a small (fluctuating) fraction of the LDD and HDD source drain implants through the gate can be responsible for severe degeneration of the matching performance of deep sub-micron CMOS technologies.

Original language	English
Title of host publication	ESSDERC 2002
Subtitle of host publication	Proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002
Editors	Elena Gnani, Giorgio Baccarani, Massimo Rudan
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	115-118
Number of pages	4
ISBN (Print)	88-900847-8-2
DOIs	https://doi.org/10.1109/ESSDERC.2002.194883
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sept 2002 → 26 Sept 2002 Conference number: 32

Conference

Conference	32nd European Solid-State Device Research Conference, ESSDERC 2002
Abbreviated title	ESSDERC
Country/Territory	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Keywords

CMOS technology
Circuits
Fasteners
Morphology
MOS devices
CMOS process
MOSFETs
Fluctuations
Threshold voltage
Implants

Access to Document

10.1109/ESSDERC.2002.194883

Impact of source drain implants on threshold voltage matching in deep sub-micron CMOS technologiesSubmitted version, 353 KBLicence: Unspecified

Cite this

Dubois, J., Knol, J., Bolt, M., Tuinhout, H., Schmitz, J., & Stolk, P. (2002). Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), ESSDERC 2002: Proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002 (pp. 115-118). IEEE. https://doi.org/10.1109/ESSDERC.2002.194883

Dubois, Jerôme ; Knol, Johan ; Bolt, Mike et al. / Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies. ESSDERC 2002: Proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002. editor / Elena Gnani ; Giorgio Baccarani ; Massimo Rudan. Piscataway, NJ : IEEE, 2002. pp. 115-118

@inproceedings{7a129cdb0da34d2ea33a0bedc6e594e7,

title = "Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies",

abstract = "A new mechanism causing deterioration of the threshold voltage matching performance of MOSFETs is described. We demonstrate that this effect depends on several fundamental CMOS device architecture aspects such as the source/drain implant energies, the gate layer thickness, a gate top oxide layer thickness and the polysilicon gate morphology. It is concluded that penetration of a small (fluctuating) fraction of the LDD and HDD source drain implants through the gate can be responsible for severe degeneration of the matching performance of deep sub-micron CMOS technologies.",

keywords = "CMOS technology, Circuits, Fasteners, Morphology, MOS devices, CMOS process, MOSFETs, Fluctuations, Threshold voltage, Implants",

author = "Jer{\^o}me Dubois and Johan Knol and Mike Bolt and Hans Tuinhout and Jurriaan Schmitz and Peter Stolk",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2002.194883",

language = "English",

isbn = "88-900847-8-2",

pages = "115--118",

editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",

booktitle = "ESSDERC 2002",

publisher = "IEEE",

address = "United States",

note = "32nd European Solid-State Device Research Conference, ESSDERC 2002, ESSDERC ; Conference date: 24-09-2002 Through 26-09-2002",

}

Dubois, J, Knol, J, Bolt, M, Tuinhout, H, Schmitz, J & Stolk, P 2002, Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies. in E Gnani, G Baccarani & M Rudan (eds), ESSDERC 2002: Proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002. IEEE, Piscataway, NJ, pp. 115-118, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.194883

Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies. / Dubois, Jerôme; Knol, Johan; Bolt, Mike et al.
ESSDERC 2002: Proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002. ed. / Elena Gnani; Giorgio Baccarani; Massimo Rudan. Piscataway, NJ: IEEE, 2002. p. 115-118.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies

AU - Dubois, Jerôme

AU - Knol, Johan

AU - Bolt, Mike

AU - Tuinhout, Hans

AU - Schmitz, Jurriaan

AU - Stolk, Peter

N1 - Conference code: 32

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A new mechanism causing deterioration of the threshold voltage matching performance of MOSFETs is described. We demonstrate that this effect depends on several fundamental CMOS device architecture aspects such as the source/drain implant energies, the gate layer thickness, a gate top oxide layer thickness and the polysilicon gate morphology. It is concluded that penetration of a small (fluctuating) fraction of the LDD and HDD source drain implants through the gate can be responsible for severe degeneration of the matching performance of deep sub-micron CMOS technologies.

AB - A new mechanism causing deterioration of the threshold voltage matching performance of MOSFETs is described. We demonstrate that this effect depends on several fundamental CMOS device architecture aspects such as the source/drain implant energies, the gate layer thickness, a gate top oxide layer thickness and the polysilicon gate morphology. It is concluded that penetration of a small (fluctuating) fraction of the LDD and HDD source drain implants through the gate can be responsible for severe degeneration of the matching performance of deep sub-micron CMOS technologies.

KW - CMOS technology

KW - Circuits

KW - Fasteners

KW - Morphology

KW - MOS devices

KW - CMOS process

KW - MOSFETs

KW - Fluctuations

KW - Threshold voltage

KW - Implants

UR - https://www.scopus.com/pages/publications/84907684167

U2 - 10.1109/ESSDERC.2002.194883

DO - 10.1109/ESSDERC.2002.194883

M3 - Conference contribution

AN - SCOPUS:84907684167

SN - 88-900847-8-2

SP - 115

EP - 118

BT - ESSDERC 2002

A2 - Gnani, Elena

A2 - Baccarani, Giorgio

A2 - Rudan, Massimo

PB - IEEE

CY - Piscataway, NJ

T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -

Dubois J, Knol J, Bolt M, Tuinhout H, Schmitz J, Stolk P. Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies. In Gnani E, Baccarani G, Rudan M, editors, ESSDERC 2002: Proceedings of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002. Piscataway, NJ: IEEE. 2002. p. 115-118 doi: 10.1109/ESSDERC.2002.194883

Impact of source/drain implants on threshold voltage matching in deep sub-micron CMOS technologies

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this