Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Tihomir Kneževic, Tomislav Suligoj, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Downloads (Pure)

Abstract

Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low-saturation-current p+n-like diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of the B atoms to the Si creates a monolayer of fixed negative charge that attracts holes to the interface. In this paper, an investigation using semiconductor simulation tools is performed starting from an all-Si test structure where suppression of electron injection from an n-Si bulk was achieved by introducing a large concentration of negative fixed charge that attracts holes to the interface between a thin-film top-layer and the bulk. This introduces a barrier which lowers the electron saturation current density of the simulated diode to become comparable to or lower than the saturation current density of holes injected into the bulk. The material properties of the top-layer such as electron mobility and tunneling mass, bandgap and electron affinity are individually varied from default Si-values to values typical for amorphous boron layers indicating that a critical concentration of negative fixed charge is always needed for suppression of the electron injection.

Original languageEnglish
Title of host publication2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
EditorsKarolj Skala, Zeljka Car, Predrag Pale, Darko Huljenic, Matej Janjic, Marko Koricic, Vlado Sruk, Slobodan Ribaric, Tihana Galinac Grbac, Zeljko Butkovic, Marina Cicin-Sain, Dejan Skvorc, Mladen Mauher, Snjezana Babic, Stjepan Gros, Boris Vrdoljak, Edvard Tijan
PublisherIEEE
Pages24-29
Number of pages6
ISBN (Electronic)978-953-233-098-4
ISBN (Print)978-1-5386-9296-7
DOIs
Publication statusPublished - 1 May 2019
Event42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Opatija, Croatia
Duration: 20 May 201924 May 2019
Conference number: 42

Publication series

NameInternational Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
PublisherIEEE
Volume2019
ISSN (Print)2623-8764

Conference

Conference42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019
Abbreviated titleMIPRO
CountryCroatia
CityOpatija
Period20/05/1924/05/19

Keywords

  • Carrier injection
  • Negative fixed interface charge
  • Pure amorphous boron
  • PureB
  • TCAD
  • Ultra-thin-layer

Fingerprint Dive into the research topics of 'Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers'. Together they form a unique fingerprint.

Cite this