Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Tihomir Kneževic, Tomislav Suligoj, Lis K. Nanver

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low-saturation-current p+n-like diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of the B atoms to the Si creates a monolayer of fixed negative charge that attracts holes to the interface. In this paper, an investigation using semiconductor simulation tools is performed starting from an all-Si test structure where suppression of electron injection from an n-Si bulk was achieved by introducing a large concentration of negative fixed charge that attracts holes to the interface between a thin-film top-layer and the bulk. This introduces a barrier which lowers the electron saturation current density of the simulated diode to become comparable to or lower than the saturation current density of holes injected into the bulk. The material properties of the top-layer such as electron mobility and tunneling mass, bandgap and electron affinity are individually varied from default Si-values to values typical for amorphous boron layers indicating that a critical concentration of negative fixed charge is always needed for suppression of the electron injection.

    Original languageEnglish
    Title of host publication2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
    EditorsKarolj Skala, Zeljka Car, Predrag Pale, Darko Huljenic, Matej Janjic, Marko Koricic, Vlado Sruk, Slobodan Ribaric, Tihana Galinac Grbac, Zeljko Butkovic, Marina Cicin-Sain, Dejan Skvorc, Mladen Mauher, Snjezana Babic, Stjepan Gros, Boris Vrdoljak, Edvard Tijan
    PublisherIEEE
    Pages24-29
    Number of pages6
    ISBN (Electronic)978-953-233-098-4
    ISBN (Print)978-1-5386-9296-7
    DOIs
    Publication statusPublished - 1 May 2019
    Event42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Opatija, Croatia
    Duration: 20 May 201924 May 2019
    Conference number: 42

    Publication series

    NameInternational Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
    PublisherIEEE
    Volume2019
    ISSN (Print)2623-8764

    Conference

    Conference42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019
    Abbreviated titleMIPRO
    CountryCroatia
    CityOpatija
    Period20/05/1924/05/19

    Fingerprint

    Boron
    Electron injection
    Diodes
    Current density
    Electron affinity
    Electron tunneling
    Electron mobility
    Monolayers
    Materials properties
    Energy gap
    Semiconductor materials
    Thin films
    Atoms
    Electrons
    Temperature

    Keywords

    • Carrier injection
    • Negative fixed interface charge
    • Pure amorphous boron
    • PureB
    • TCAD
    • Ultra-thin-layer

    Cite this

    Kneževic, T., Suligoj, T., & Nanver, L. K. (2019). Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. In K. Skala, Z. Car, P. Pale, D. Huljenic, M. Janjic, M. Koricic, V. Sruk, S. Ribaric, T. G. Grbac, Z. Butkovic, M. Cicin-Sain, D. Skvorc, M. Mauher, S. Babic, S. Gros, B. Vrdoljak, ... E. Tijan (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 24-29). [8757156] (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO); Vol. 2019). IEEE. https://doi.org/10.23919/MIPRO.2019.8757156
    Kneževic, Tihomir ; Suligoj, Tomislav ; Nanver, Lis K. / Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. editor / Karolj Skala ; Zeljka Car ; Predrag Pale ; Darko Huljenic ; Matej Janjic ; Marko Koricic ; Vlado Sruk ; Slobodan Ribaric ; Tihana Galinac Grbac ; Zeljko Butkovic ; Marina Cicin-Sain ; Dejan Skvorc ; Mladen Mauher ; Snjezana Babic ; Stjepan Gros ; Boris Vrdoljak ; Edvard Tijan. IEEE, 2019. pp. 24-29 (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)).
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    abstract = "Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low-saturation-current p+n-like diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of the B atoms to the Si creates a monolayer of fixed negative charge that attracts holes to the interface. In this paper, an investigation using semiconductor simulation tools is performed starting from an all-Si test structure where suppression of electron injection from an n-Si bulk was achieved by introducing a large concentration of negative fixed charge that attracts holes to the interface between a thin-film top-layer and the bulk. This introduces a barrier which lowers the electron saturation current density of the simulated diode to become comparable to or lower than the saturation current density of holes injected into the bulk. The material properties of the top-layer such as electron mobility and tunneling mass, bandgap and electron affinity are individually varied from default Si-values to values typical for amorphous boron layers indicating that a critical concentration of negative fixed charge is always needed for suppression of the electron injection.",
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    Kneževic, T, Suligoj, T & Nanver, LK 2019, Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. in K Skala, Z Car, P Pale, D Huljenic, M Janjic, M Koricic, V Sruk, S Ribaric, TG Grbac, Z Butkovic, M Cicin-Sain, D Skvorc, M Mauher, S Babic, S Gros, B Vrdoljak & E Tijan (eds), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings., 8757156, International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), vol. 2019, IEEE, pp. 24-29, 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija, Croatia, 20/05/19. https://doi.org/10.23919/MIPRO.2019.8757156

    Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. / Kneževic, Tihomir; Suligoj, Tomislav; Nanver, Lis K.

    2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. ed. / Karolj Skala; Zeljka Car; Predrag Pale; Darko Huljenic; Matej Janjic; Marko Koricic; Vlado Sruk; Slobodan Ribaric; Tihana Galinac Grbac; Zeljko Butkovic; Marina Cicin-Sain; Dejan Skvorc; Mladen Mauher; Snjezana Babic; Stjepan Gros; Boris Vrdoljak; Edvard Tijan. IEEE, 2019. p. 24-29 8757156 (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO); Vol. 2019).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AU - Suligoj, Tomislav

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    Kneževic T, Suligoj T, Nanver LK. Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. In Skala K, Car Z, Pale P, Huljenic D, Janjic M, Koricic M, Sruk V, Ribaric S, Grbac TG, Butkovic Z, Cicin-Sain M, Skvorc D, Mauher M, Babic S, Gros S, Vrdoljak B, Tijan E, editors, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. IEEE. 2019. p. 24-29. 8757156. (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)). https://doi.org/10.23919/MIPRO.2019.8757156