Improved device performance by multistep or carbon co-implants

Reinoud Liefting, Rutger C.M. Wijburg, Jonathan S. Custer, Hans Wallinga, Frans W. Saris

    Research output: Contribution to journalArticleAcademicpeer-review

    11 Citations (Scopus)
    214 Downloads (Pure)


    High-energy ion implantation is used for forming the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, give rise to an increased leakage current and to collector-emitter shorts. These shorts reduce the transistor yield. The use of multiple step implants or the introduction of a C gettering layer are demonstrated to avoid dislocation formation. Experimental results show that these schemes subsequently lower the leakage current and dramatically increase device yield. The presence of C can cause increased collector/substrate leakage, indicating that the C profile needs to be optimized with respect to the doping profiles
    Original languageEnglish
    Pages (from-to)50-55
    JournalIEEE Transactions on Electron Devices
    Issue number1
    Publication statusPublished - 1994


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