Improved device performance by multistep or carbon co-implants

Reinoud Liefting, Rutger C.M. Wijburg, Jonathan S. Custer, Hans Wallinga, Frans W. Saris

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Abstract

High-energy ion implantation is used for forming the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, give rise to an increased leakage current and to collector-emitter shorts. These shorts reduce the transistor yield. The use of multiple step implants or the introduction of a C gettering layer are demonstrated to avoid dislocation formation. Experimental results show that these schemes subsequently lower the leakage current and dramatically increase device yield. The presence of C can cause increased collector/substrate leakage, indicating that the C profile needs to be optimized with respect to the doping profiles
Original languageEnglish
Pages (from-to)50-55
JournalIEEE transactions on electron devices
Volume41
Issue number1
DOIs
Publication statusPublished - 1994

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Leakage currents
Carbon
Bipolar transistors
Ion implantation
Transistors
Doping (additives)
Annealing
Defects
Substrates

Cite this

Liefting, R., Wijburg, R. C. M., Custer, J. S., Wallinga, H., & Saris, F. W. (1994). Improved device performance by multistep or carbon co-implants. IEEE transactions on electron devices, 41(1), 50-55. https://doi.org/10.1109/16.259619
Liefting, Reinoud ; Wijburg, Rutger C.M. ; Custer, Jonathan S. ; Wallinga, Hans ; Saris, Frans W. / Improved device performance by multistep or carbon co-implants. In: IEEE transactions on electron devices. 1994 ; Vol. 41, No. 1. pp. 50-55.
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Liefting, R, Wijburg, RCM, Custer, JS, Wallinga, H & Saris, FW 1994, 'Improved device performance by multistep or carbon co-implants' IEEE transactions on electron devices, vol. 41, no. 1, pp. 50-55. https://doi.org/10.1109/16.259619

Improved device performance by multistep or carbon co-implants. / Liefting, Reinoud; Wijburg, Rutger C.M.; Custer, Jonathan S.; Wallinga, Hans; Saris, Frans W.

In: IEEE transactions on electron devices, Vol. 41, No. 1, 1994, p. 50-55.

Research output: Contribution to journalArticleAcademicpeer-review

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