Improved device performance by multistep or carbon co-implants

Reinoud Liefting, Rutger C.M. Wijburg, Jonathan S. Custer, Hans Wallinga, Frans W. Saris

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    Abstract

    High-energy ion implantation is used for forming the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, give rise to an increased leakage current and to collector-emitter shorts. These shorts reduce the transistor yield. The use of multiple step implants or the introduction of a C gettering layer are demonstrated to avoid dislocation formation. Experimental results show that these schemes subsequently lower the leakage current and dramatically increase device yield. The presence of C can cause increased collector/substrate leakage, indicating that the C profile needs to be optimized with respect to the doping profiles
    Original languageEnglish
    Pages (from-to)50-55
    JournalIEEE transactions on electron devices
    Volume41
    Issue number1
    DOIs
    Publication statusPublished - 1994

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  • Cite this

    Liefting, R., Wijburg, R. C. M., Custer, J. S., Wallinga, H., & Saris, F. W. (1994). Improved device performance by multistep or carbon co-implants. IEEE transactions on electron devices, 41(1), 50-55. https://doi.org/10.1109/16.259619