Abstract
High-quality crystalline KY(WO4)2:Yb3+ layers co-doped with large concentrations of optically inert Gd3+ and Lu3+ ions were grown by vertical liquid phase epitaxy. The codoping enhances the refractive index contrast between the active layer and the undoped KY(WO4)2 substrate to ~7.5×10-3. A K2W2O7 solvent was employed for the growth of layers onto undoped (010)-oriented KYW substrates. Single crystalline layers of thickness 5-10 µm were grown at low level of supersaturation and growth temperatures of 920-923°C. The layer quality was studied by X-ray diffraction. The composition of the grown layers was determined by laser-ablation inductively-coupled-plasma mass spectrometry (LA-ICP-MS). Planar waveguide lasers with low laser threshold of 18 mW, record-high slope efficiency of 82.3%, and maximum output power of 195 mW have been achieved.
Original language | Undefined |
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Title of host publication | Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter |
Editors | Stefano Beri, Philippe Tassin, Gordon Craggs, Xaveer Leijtens, Jan Dankaert |
Publisher | VUBPress Brussels University Press |
Pages | 133-136 |
Number of pages | 4 |
ISBN (Print) | 978-90-5487-650-2 |
Publication status | Published - 5 Nov 2009 |
Event | 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium Duration: 5 Nov 2009 → 6 Nov 2009 Conference number: 14 |
Publication series
Name | |
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Publisher | VUBPress Brussels University Press |
Conference
Conference | 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 |
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Country/Territory | Belgium |
City | Brussels |
Period | 5/11/09 → 6/11/09 |
Keywords
- IR-69943
- METIS-265796
- Crystal growth
- epitaxial
- IOMS-APD: Active Photonic Devices
- LPE
- KYW
- EWI-17451
- Laser