Improved method for determining inversion layer mobility of electrons in trench MOSFETs

M. G.L. Van Den Heuvel; R. J.E. Hueting; E. A. Hijzen; M. A.A. In 't Zandt

doi:10.1049/ip-cds:20040454

Improved method for determining inversion layer mobility of electrons in trench MOSFETs

M. G.L. Van Den Heuvel^*, R. J.E. Hueting, E. A. Hijzen, M. A.A. In 't Zandt

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

4 Citations (Scopus)

Abstract

Trench sidewall effective electron mobility (μ_eff) values were determined by using the split capacitance-voltage (CV) method for a large range of the transversal effective field (E_eff) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. Results show that the split CV method is an accurate method for determining μ_eff(E_eff) data in trench MOSFETs; the {100} μ_eff data approaches published data on planar MOSFETs for high E_eff; and mobility behaviour can be explained with generally accepted scattering models for the entire range of E_eff. The results are important for the optimisation of trench power devices.

Original language	English
Pages (from-to)	225-230
Number of pages	6
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	151
Issue number	3
DOIs	https://doi.org/10.1049/ip-cds:20040454
Publication status	Published - 1 Jun 2004
Externally published	Yes
Event	15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom Duration: 14 Jul 2003 → 17 Jul 2003 Conference number: 15

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title = "Improved method for determining inversion layer mobility of electrons in trench MOSFETs",

abstract = "Trench sidewall effective electron mobility (μeff) values were determined by using the split capacitance-voltage (CV) method for a large range of the transversal effective field (Eeff) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. Results show that the split CV method is an accurate method for determining μeff(Eeff) data in trench MOSFETs; the {100} μeff data approaches published data on planar MOSFETs for high Eeff; and mobility behaviour can be explained with generally accepted scattering models for the entire range of Eeff. The results are important for the optimisation of trench power devices.",

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TY - JOUR

T1 - Improved method for determining inversion layer mobility of electrons in trench MOSFETs

AU - Van Den Heuvel, M. G.L.

AU - Hueting, R. J.E.

AU - Hijzen, E. A.

AU - In 't Zandt, M. A.A.

N1 - Conference code: 15

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Trench sidewall effective electron mobility (μeff) values were determined by using the split capacitance-voltage (CV) method for a large range of the transversal effective field (Eeff) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. Results show that the split CV method is an accurate method for determining μeff(Eeff) data in trench MOSFETs; the {100} μeff data approaches published data on planar MOSFETs for high Eeff; and mobility behaviour can be explained with generally accepted scattering models for the entire range of Eeff. The results are important for the optimisation of trench power devices.

AB - Trench sidewall effective electron mobility (μeff) values were determined by using the split capacitance-voltage (CV) method for a large range of the transversal effective field (Eeff) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. Results show that the split CV method is an accurate method for determining μeff(Eeff) data in trench MOSFETs; the {100} μeff data approaches published data on planar MOSFETs for high Eeff; and mobility behaviour can be explained with generally accepted scattering models for the entire range of Eeff. The results are important for the optimisation of trench power devices.

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U2 - 10.1049/ip-cds:20040454

DO - 10.1049/ip-cds:20040454

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SN - 1350-2409

VL - 151

SP - 225

EP - 230

JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

IS - 3

T2 - 15th International Symposium on Power Semiconductor Devices and ICs 2003

Y2 - 14 July 2003 through 17 July 2003

ER -

Improved method for determining inversion layer mobility of electrons in trench MOSFETs

Abstract

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