Improved method for determining inversion layer mobility of electrons in trench MOSFETs

M. G.L. Van Den Heuvel*, R. J.E. Hueting, E. A. Hijzen, M. A.A. In 't Zandt

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

4 Citations (Scopus)

Abstract

Trench sidewall effective electron mobility (μeff) values were determined by using the split capacitance-voltage (CV) method for a large range of the transversal effective field (Eeff) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. Results show that the split CV method is an accurate method for determining μeff(Eeff) data in trench MOSFETs; the {100} μeff data approaches published data on planar MOSFETs for high Eeff; and mobility behaviour can be explained with generally accepted scattering models for the entire range of Eeff. The results are important for the optimisation of trench power devices.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalIEE Proceedings: Circuits, Devices and Systems
Volume151
Issue number3
DOIs
Publication statusPublished - 1 Jun 2004
Externally publishedYes
Event15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom
Duration: 14 Jul 200317 Jul 2003
Conference number: 15

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