Improved RF devices for future adaptive wireless systems using two-sided contacting and AlN cooling

Lis K. Nanver*, Hugo Schellevis, Tom L M Scholtes, Luigi La Spina, Gianpaolo Lorito, Francesco Sarubbi, Viktor Gonda, Miloš Popadić, Koen Buisman, Leo C N De Vreede, Cong Huang, Silvana Milosavljević, Egbert J G Goudena

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)


This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special Nd x-2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).

Original languageEnglish
Article number5226772
Pages (from-to)2322-2338
Number of pages17
JournalIEEE journal of solid-state circuits
Issue number9
Publication statusPublished - 26 Aug 2009
Externally publishedYes


  • Adaptive circuits
  • Aluminum nitride deposition
  • Bipolar junction transistors (BJTs)
  • Complementary bipolar silicon technology
  • Heatspreaders
  • Heterojunction bipolar transistors (HBTs)
  • Microwave devices
  • Radio frequency (RF) circuits
  • Wireless systems


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