Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx+ ions

L.G.A.M. Alink*, R.W.E. van de Kruijs, E. Louis, F. Bijkerk, J. Verhoeven

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

To improve the thermal stability of Mo/Si multilayers, a novel method to form carbide based diffusion barriers, produced by the implantation of Si with CHx+ ions, has been developed. The multilayers were grown by e-beam evaporation, while CHx+ ions were implanted at the Mo/Si interfaces, using a Kaufman ion source with a Ne / CH4 gas mixture. Energies were varied from 300 to 1000 eV. The growth as well as the implantation procedure were monitored by in situ X-ray reflectometry. Auger Electron Spectroscopy was used to characterize the surface composition before and after CHx+ ion implantation. The shift of the Si LVV Auger peak revealed the formation of SiC. Ex situ X-ray reflectometry showed a thermal stability of both the reflectivity and the multilayer period up to 430 K.

Original languageEnglish
Pages (from-to)26-31
Number of pages6
JournalThin solid films
Volume510
Issue number1-2
DOIs
Publication statusPublished - 3 Jul 2006
Externally publishedYes

Keywords

  • Carbon implantation
  • Multilayers
  • Thermal stability

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