Abstract
Ion implantation is used for realization of the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, can give rise to an increased leakage current and to collector-emitter shorts. Two methods are proposed to avoid dislocation formation. First, by using multiple step implants, and second, by application of a carbon gettering layer. Experimental results show that these schemes can lower leakage currents, and moreover dramatically increase device yield. However, the carbon profile needs a further optimization with respect to the quality of the collector-substrate junction.
Original language | English |
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Pages (from-to) | 543-546 |
Journal | Microelectronic engineering |
Volume | 19 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1992 |
Event | 22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium Duration: 14 Sep 1992 → 17 Sep 1992 Conference number: 22 |