Ion implantation is used for realization of the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, can give rise to an increased leakage current and to collector-emitter shorts. Two methods are proposed to avoid dislocation formation. First, by using multiple step implants, and second, by application of a carbon gettering layer. Experimental results show that these schemes can lower leakage currents, and moreover dramatically increase device yield. However, the carbon profile needs a further optimization with respect to the quality of the collector-substrate junction.
|Publication status||Published - 1992|
|Event||22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium|
Duration: 14 Sep 1992 → 17 Sep 1992
Conference number: 22