Improvement of device characteristics by multiple step implants or introducing a C gettering layer

R.C.M. Wijburg, J.R. Liefting, J.S. Custer, H. Wallinga, F.W. Saris

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)
    51 Downloads (Pure)

    Abstract

    Ion implantation is used for realization of the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, can give rise to an increased leakage current and to collector-emitter shorts. Two methods are proposed to avoid dislocation formation. First, by using multiple step implants, and second, by application of a carbon gettering layer. Experimental results show that these schemes can lower leakage currents, and moreover dramatically increase device yield. However, the carbon profile needs a further optimization with respect to the quality of the collector-substrate junction.
    Original languageEnglish
    Pages (from-to)543-546
    JournalMicroelectronic engineering
    Volume19
    Issue number1-4
    DOIs
    Publication statusPublished - 1992
    Event22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium
    Duration: 14 Sep 199217 Sep 1992
    Conference number: 22

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