Improvements of deposited interpolysilicon dielectric characteristics with RTP N/sub 2/O-anneal

J.H. Klootwijk, Marcel H.H. Weusthof, H. van Kranenburg, P.H. Woerlee, Hans Wallinga

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    Nitridation of deposited instead of thermally grown oxides was studied to form high-quality inter-polysilicon dielectric layers for nonvolatile memories. It was found that by optimizing the texture and morphology of the polysilicon layers, and by optimizing the post-dielectric deposition-anneal, very high-quality dielectric layers can be obtained. In this paper, it is shown that not only for deposited gate oxides, but also for deposited inter-polysilicon oxides, rapid thermal annealing leads to previously unpublished improved electrical characteristics, like high charge to breakdown (Qbd≈20 C/cm2) and lower leakage currents. Moreover, the annealed dielectrics had less electron trapping when stressed
    Original languageEnglish
    Pages (from-to)358-359
    JournalIEEE electron device letters
    Issue number7
    Publication statusPublished - 1996


    • METIS-111994
    • IR-15122


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