In-depth agglomeration of d-metals at Si-on-Mo interfaces

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Abstract

Reflective Si/Mo multilayer mirrors with protective d-metal surfaces onto a range of upper Mo and Si layer thicknesses have been grown with physical vapor deposition and investigated on diffusion and in-depth compound formation. Laterally inhomogeneous upward Si and downward d-metal diffusion occurs through Mo layers up to 2 nm thickness. Especially Ru and Rh agglomerate and form silicides such as Ru2Si3 and Rh2Si not in the midst of the Si layer but at the Si/Mo interface. This appears to be mediated by MoSi2 presence at the Si/Mo interface that acts as precursor via better lattice compatibility and lowering of formation energy.
Original languageUndefined
Pages (from-to)064314-
JournalJournal of Applied Physics
Volume105
Issue number6
DOIs
Publication statusPublished - 2009

Keywords

  • METIS-266572
  • IR-72886

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