In-Gap States and Band-Like Transport in Memristive Devices

Christoph Baeumer*, Carsten Funck, Andrea Locatelli, Tevfik Onur Menteş, Francesca Genuzio, Thomas Heisig, Felix Hensling, Nicolas Raab, Claus M. Schneider, Stephan Menzel, Rainer Waser, Regina DIttmann

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Abstract

Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.

Original languageEnglish
Pages (from-to)54-60
Number of pages7
JournalNano letters
Volume19
Issue number1
DOIs
Publication statusPublished - 9 Jan 2019
Externally publishedYes

Keywords

  • electronic structure
  • electronic transport
  • in-gap states
  • Resistive switching
  • RESPES
  • spectromicroscopy
  • SrTiO

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