In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gaurav Gupta, Shivakumar D. Tharnmaiah, Raymond J.E. Hueting, Lis K. Nanver

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

    Original languageEnglish
    Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
    PublisherIEEE
    Pages12-17
    Number of pages6
    ISBN (Electronic)9781728114668
    DOIs
    Publication statusPublished - 6 Jun 2019
    Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan
    Duration: 18 Mar 201921 Mar 2019
    Conference number: 32

    Conference

    Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
    Abbreviated titleICMTS
    CountryJapan
    CityKitakyushu City
    Period18/03/1921/03/19

    Fingerprint

    Molybdenum oxide
    Inversion layers
    Palladium
    Diodes
    Silicon
    Ohmic contacts
    Leakage currents
    Oxide films
    Evaporation
    Thin films
    Substrates

    Keywords

    • Diodes
    • Inversion layer
    • Metal workfunction
    • Molybdenum-oxide
    • Resistivity
    • Sheet resistance
    • Silicon
    • Ultrashal-low junctions

    Cite this

    Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E., & Nanver, L. K. (2019). In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 12-17). [8730920] IEEE. https://doi.org/10.1109/ICMTS.2019.8730920
    Gupta, Gaurav ; Tharnmaiah, Shivakumar D. ; Hueting, Raymond J.E. ; Nanver, Lis K. / In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. pp. 12-17
    @inproceedings{32256b7ccc56432d953d6862847c442c,
    title = "In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures",
    abstract = "Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.",
    keywords = "Diodes, Inversion layer, Metal workfunction, Molybdenum-oxide, Resistivity, Sheet resistance, Silicon, Ultrashal-low junctions",
    author = "Gaurav Gupta and Tharnmaiah, {Shivakumar D.} and Hueting, {Raymond J.E.} and Nanver, {Lis K.}",
    year = "2019",
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    day = "6",
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    pages = "12--17",
    booktitle = "2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019",
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    Gupta, G, Tharnmaiah, SD, Hueting, RJE & Nanver, LK 2019, In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730920, IEEE, pp. 12-17, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Japan, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730920

    In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. / Gupta, Gaurav; Tharnmaiah, Shivakumar D.; Hueting, Raymond J.E.; Nanver, Lis K.

    2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 12-17 8730920.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AU - Gupta, Gaurav

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    AU - Nanver, Lis K.

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    AB - Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

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    KW - Sheet resistance

    KW - Silicon

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    Gupta G, Tharnmaiah SD, Hueting RJE, Nanver LK. In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE. 2019. p. 12-17. 8730920 https://doi.org/10.1109/ICMTS.2019.8730920