In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gaurav Gupta, Shivakumar D. Tharnmaiah, Raymond J.E. Hueting, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

Original languageEnglish
Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
PublisherIEEE
Pages12-17
Number of pages6
ISBN (Electronic)9781728114668
DOIs
Publication statusPublished - 6 Jun 2019
Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan
Duration: 18 Mar 201921 Mar 2019
Conference number: 32

Conference

Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
Abbreviated titleICMTS
CountryJapan
CityKitakyushu City
Period18/03/1921/03/19

Fingerprint

Molybdenum oxide
Inversion layers
Palladium
Diodes
Silicon
Ohmic contacts
Leakage currents
Oxide films
Evaporation
Thin films
Substrates

Keywords

  • Diodes
  • Inversion layer
  • Metal workfunction
  • Molybdenum-oxide
  • Resistivity
  • Sheet resistance
  • Silicon
  • Ultrashal-low junctions

Cite this

Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E., & Nanver, L. K. (2019). In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 12-17). [8730920] IEEE. https://doi.org/10.1109/ICMTS.2019.8730920
Gupta, Gaurav ; Tharnmaiah, Shivakumar D. ; Hueting, Raymond J.E. ; Nanver, Lis K. / In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. pp. 12-17
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abstract = "Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.",
keywords = "Diodes, Inversion layer, Metal workfunction, Molybdenum-oxide, Resistivity, Sheet resistance, Silicon, Ultrashal-low junctions",
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Gupta, G, Tharnmaiah, SD, Hueting, RJE & Nanver, LK 2019, In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730920, IEEE, pp. 12-17, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Japan, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730920

In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. / Gupta, Gaurav; Tharnmaiah, Shivakumar D.; Hueting, Raymond J.E.; Nanver, Lis K.

2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 12-17 8730920.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

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Gupta G, Tharnmaiah SD, Hueting RJE, Nanver LK. In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE. 2019. p. 12-17. 8730920 https://doi.org/10.1109/ICMTS.2019.8730920