In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gaurav Gupta; Shivakumar D. Tharnmaiah; Raymond J.E. Hueting; Lis K. Nanver

doi:10.1109/ICMTS.2019.8730920

In search of a hole inversion layer in Pd/MoO_x/Si diodes through I- v characterization using dedicated ring-shaped test structures

Gaurav Gupta
, Shivakumar D. Tharnmaiah
, Raymond J.E. Hueting
, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Downloads (Pure)

Abstract

Palladium (Pd) capped molybdenum-oxide (MoO_x) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~10⁸ and a low leakage current of ~10^-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO_x. Reports in the literature that an inversion layer of holes should be present at the MoO_x/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

Original language	English
Title of host publication	2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
Publisher	IEEE
Pages	12-17
Number of pages	6
ISBN (Electronic)	9781728114668
DOIs	https://doi.org/10.1109/ICMTS.2019.8730920
Publication status	Published - 6 Jun 2019
Event	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan Duration: 18 Mar 2019 → 21 Mar 2019 Conference number: 32

Conference

Conference	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
Abbreviated title	ICMTS
Country/Territory	Japan
City	Kitakyushu City
Period	18/03/19 → 21/03/19

Keywords

Diodes
Inversion layer
Metal workfunction
Molybdenum-oxide
Resistivity
Sheet resistance
Silicon
Ultrashal-low junctions

Access to Document

10.1109/ICMTS.2019.8730920

Cite this

Gupta, G., Tharnmaiah, S. D., Hueting, R. J. E., & Nanver, L. K. (2019). In search of a hole inversion layer in Pd/MoO_x/Si diodes through I- v characterization using dedicated ring-shaped test structures. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (pp. 12-17). Article 8730920 IEEE. https://doi.org/10.1109/ICMTS.2019.8730920

@inproceedings{32256b7ccc56432d953d6862847c442c,

title = "In search of a hole inversion layer in Pd/MoOx/Si diodes through I- v characterization using dedicated ring-shaped test structures",

abstract = "Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of \textasciitilde{}108 and a low leakage current of \textasciitilde{}10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.",

keywords = "Diodes, Inversion layer, Metal workfunction, Molybdenum-oxide, Resistivity, Sheet resistance, Silicon, Ultrashal-low junctions",

author = "Gaurav Gupta and Tharnmaiah, \{Shivakumar D.\} and Hueting, \{Raymond J.E.\} and Nanver, \{Lis K.\}",

year = "2019",

month = jun,

day = "6",

doi = "10.1109/ICMTS.2019.8730920",

language = "English",

pages = "12--17",

booktitle = "2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019",

publisher = "IEEE",

address = "United States",

note = "32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, ICMTS ; Conference date: 18-03-2019 Through 21-03-2019",

}

Gupta, G, Tharnmaiah, SD, Hueting, RJE & Nanver, LK 2019, In search of a hole inversion layer in Pd/MoO_x/Si diodes through I- v characterization using dedicated ring-shaped test structures. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730920, IEEE, pp. 12-17, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Japan, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730920

In search of a hole inversion layer in Pd/MoO_x/Si diodes through I- v characterization using dedicated ring-shaped test structures. / Gupta, Gaurav; Tharnmaiah, Shivakumar D.; Hueting, Raymond J.E. et al.
2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 12-17 8730920.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - Palladium (Pd) capped molybdenum-oxide (MoOx) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~108 and a low leakage current of ~10-11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoOx. Reports in the literature that an inversion layer of holes should be present at the MoOx/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

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KW - Sheet resistance

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KW - Ultrashal-low junctions

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