In situ ellipsometry study of atomic hydrogen etching of extreme ultraviolet induced carbon layers

Juequan Chen, Eric Louis, Rob Harmsen, T. Tsarfati, Herbert Wormeester, Maarten van Kampen, Willem van Schaik, Robbert Wilhelmus Elisabeth van de Kruijs, Frederik Bijkerk

Research output: Contribution to journalArticleAcademicpeer-review

19 Citations (Scopus)

Abstract

Atomic hydrogen based etching is generally considered an efficient method for the removal of carbon films resulting from photo-induced hydrocarbon dissociation, as occurs in extreme ultraviolet (EUV) photolithography environments. The etch rate of atomic hydrogen for three different kinds of carbon films was determined, namely for EUV-induced carbon, hot filament evaporated carbon and e-beam evaporated carbon. The etching process was monitored in situ by spectroscopic ellipsometry. The etch rate was found to depend on the type of carbon (polymer or graphite-like), on the layer thickness, and on the temperature. The EUV-induced carbon shows the highest etch rate, with a value of ∼0.2 nm/min at a sample temperature of 60 °C. The more graphite-like carbon layers showed an etch rate that was about 10 times lower at this temperature. An activation energy of 0.45 eV was found for etching of the EUV-induced carbon layer
Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalApplied surface science
Volume258
Issue number1
DOIs
Publication statusPublished - 2011

Keywords

  • IR-104470
  • METIS-277876

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