In situ growth rate measurements of selective LPCVD of Tungsten

J. Holleman; A. Hasper; J. Middelhoek

doi:10.1149/1.2085758

In situ growth rate measurements of selective LPCVD of Tungsten

J. Holleman, A. Hasper, J. Middelhoek

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Abstract

The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.

Original language	English
Pages (from-to)	989-992
Journal	Journal of the Electrochemical Society
Volume	138
Issue number	4
DOIs	https://doi.org/10.1149/1.2085758
Publication status	Published - 1991

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@article{e70d7964ac4e4670a4bcdc467616d77d,

title = "In situ growth rate measurements of selective LPCVD of Tungsten",

abstract = "The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.",

author = "J. Holleman and A. Hasper and J. Middelhoek",

year = "1991",

doi = "10.1149/1.2085758",

language = "English",

volume = "138",

pages = "989--992",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "4",

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TY - JOUR

T1 - In situ growth rate measurements of selective LPCVD of Tungsten

AU - Holleman, J.

AU - Hasper, A.

AU - Middelhoek, J.

PY - 1991

Y1 - 1991

N2 - The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.

AB - The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.

U2 - 10.1149/1.2085758

DO - 10.1149/1.2085758

M3 - Article

SN - 0013-4651

VL - 138

SP - 989

EP - 992

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 4

ER -

In situ growth rate measurements of selective LPCVD of Tungsten

Abstract

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