In situ growth rate measurements of selective LPCVD of Tungsten

J. Holleman, A. Hasper, J. Middelhoek

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    Abstract

    The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.
    Original languageEnglish
    Pages (from-to)989-992
    JournalJournal of the Electrochemical Society
    Volume138
    Issue number4
    DOIs
    Publication statusPublished - 1991

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