In situ hall effect monitoring of vacuum annealing of In2O3:H thin films

H.F. Wardenga, M.V. Frischbier, M. Morales-Masis, A. Klein*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

33 Citations (Scopus)
19 Downloads (Pure)

Abstract

Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.
Original languageEnglish
Pages (from-to)561-574
JournalMaterials
Volume8
Issue number2
DOIs
Publication statusPublished - 6 Feb 2015
Externally publishedYes

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