In situ hall effect monitoring of vacuum annealing of In2O3:H thin films

H.F. Wardenga; M.V. Frischbier; M. Morales-Masis; A. Klein

doi:10.3390/ma8020561

In situ hall effect monitoring of vacuum annealing of In₂O₃:H thin films

H.F. Wardenga
, M.V. Frischbier
, M. Morales-Masis
, A. Klein^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

55 Citations (Scopus)

77 Downloads (Pure)

Abstract

Hydrogen doped In₂O₃ thin films were prepared by room temperature sputter deposition with the addition of H₂O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm²/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In₂O₃:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In₂O₃:H films.

Original language	English
Pages (from-to)	561-574
Journal	Materials
Volume	8
Issue number	2
DOIs	https://doi.org/10.3390/ma8020561
Publication status	Published - 6 Feb 2015
Externally published	Yes

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Cite this

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title = "In situ hall effect monitoring of vacuum annealing of In2O3:H thin films",

abstract = "Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.",

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T1 - In situ hall effect monitoring of vacuum annealing of In2O3:H thin films

AU - Wardenga, H.F.

AU - Frischbier, M.V.

AU - Morales-Masis, M.

AU - Klein, A.

PY - 2015/2/6

Y1 - 2015/2/6

N2 - Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

AB - Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

UR - https://www.scopus.com/pages/publications/84923816168

U2 - 10.3390/ma8020561

DO - 10.3390/ma8020561

M3 - Article

SN - 1996-1944

VL - 8

SP - 561

EP - 574

JO - Materials

JF - Materials

IS - 2

ER -

In situ hall effect monitoring of vacuum annealing of In₂O₃:H thin films

Abstract

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