In-situ monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure

Research output: Contribution to journalArticleAcademicpeer-review

203 Citations (Scopus)

Abstract

A suitable in situ monitoring technique for growth of thin films is reflection high energy electron diffraction (RHEED). Deposition techniques, like pulsed laser deposition (PLD) and sputter deposition, used for fabrication of complex oxide thin films use relatively high oxygen pressures (up to 100 Pa) and are, therefore, not compatible with ultrahigh vacuum RHEED equipment. We have developed a RHEED system which can be used for growth monitoring during the deposition of complex oxides at standard PLD conditions. We are able to increase the deposition pressure up to 50 Pa using a two-stage differential pumping system. Clear RHEED patterns are observable at these high pressures. The applicability of this system is demonstrated with the study of homoepitaxial growth of SrTiO3 as well as the heteroepitaxial growth of YBa2Cu3O7-δ on SrTiO3. Intensity oscillations of the RHEED reflections, indicating two-dimensional growth, are observed up to several tens of nanometers film thickness in both cases
Original languageUndefined
Pages (from-to)1888-1890
Number of pages3
JournalApplied physics letters
Volume70
Issue number14
DOIs
Publication statusPublished - 1997

Keywords

  • METIS-129287
  • IR-24487

Cite this

@article{2d0ddf019a1e497bbc2a85ec3489caf7,
title = "In-situ monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure",
abstract = "A suitable in situ monitoring technique for growth of thin films is reflection high energy electron diffraction (RHEED). Deposition techniques, like pulsed laser deposition (PLD) and sputter deposition, used for fabrication of complex oxide thin films use relatively high oxygen pressures (up to 100 Pa) and are, therefore, not compatible with ultrahigh vacuum RHEED equipment. We have developed a RHEED system which can be used for growth monitoring during the deposition of complex oxides at standard PLD conditions. We are able to increase the deposition pressure up to 50 Pa using a two-stage differential pumping system. Clear RHEED patterns are observable at these high pressures. The applicability of this system is demonstrated with the study of homoepitaxial growth of SrTiO3 as well as the heteroepitaxial growth of YBa2Cu3O7-δ on SrTiO3. Intensity oscillations of the RHEED reflections, indicating two-dimensional growth, are observed up to several tens of nanometers film thickness in both cases",
keywords = "METIS-129287, IR-24487",
author = "Rijnders, {Augustinus J.H.M.} and Gertjan Koster and Blank, {David H.A.} and Horst Rogalla",
year = "1997",
doi = "10.1063/1.118687",
language = "Undefined",
volume = "70",
pages = "1888--1890",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",

}

TY - JOUR

T1 - In-situ monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure

AU - Rijnders, Augustinus J.H.M.

AU - Koster, Gertjan

AU - Blank, David H.A.

AU - Rogalla, Horst

PY - 1997

Y1 - 1997

N2 - A suitable in situ monitoring technique for growth of thin films is reflection high energy electron diffraction (RHEED). Deposition techniques, like pulsed laser deposition (PLD) and sputter deposition, used for fabrication of complex oxide thin films use relatively high oxygen pressures (up to 100 Pa) and are, therefore, not compatible with ultrahigh vacuum RHEED equipment. We have developed a RHEED system which can be used for growth monitoring during the deposition of complex oxides at standard PLD conditions. We are able to increase the deposition pressure up to 50 Pa using a two-stage differential pumping system. Clear RHEED patterns are observable at these high pressures. The applicability of this system is demonstrated with the study of homoepitaxial growth of SrTiO3 as well as the heteroepitaxial growth of YBa2Cu3O7-δ on SrTiO3. Intensity oscillations of the RHEED reflections, indicating two-dimensional growth, are observed up to several tens of nanometers film thickness in both cases

AB - A suitable in situ monitoring technique for growth of thin films is reflection high energy electron diffraction (RHEED). Deposition techniques, like pulsed laser deposition (PLD) and sputter deposition, used for fabrication of complex oxide thin films use relatively high oxygen pressures (up to 100 Pa) and are, therefore, not compatible with ultrahigh vacuum RHEED equipment. We have developed a RHEED system which can be used for growth monitoring during the deposition of complex oxides at standard PLD conditions. We are able to increase the deposition pressure up to 50 Pa using a two-stage differential pumping system. Clear RHEED patterns are observable at these high pressures. The applicability of this system is demonstrated with the study of homoepitaxial growth of SrTiO3 as well as the heteroepitaxial growth of YBa2Cu3O7-δ on SrTiO3. Intensity oscillations of the RHEED reflections, indicating two-dimensional growth, are observed up to several tens of nanometers film thickness in both cases

KW - METIS-129287

KW - IR-24487

U2 - 10.1063/1.118687

DO - 10.1063/1.118687

M3 - Article

VL - 70

SP - 1888

EP - 1890

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 14

ER -