In-situ monitoring of growth and oxidation of ALD TiN layers followed by reduction in atomic hydrogen

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    TiN is a material, which is increasingly used in IC technology as a diffusion barrier, gate material, current conductor, and antireflective coating. In MEMS, TiN is used as a heater for micro hotplates. The important applications of TiN are based on its well-known high thermodynamic stability, high corrosion resistance, low friction constant, relatively low electrical resistivity, and high mechanical hardness. Thin and ultra-thin TiN layers, realized by ALD technique, attract growing attention due to its high quality and possibility to control layer thickness on nanometer scale. To provoke the use of such ALD TiN in novel electron devices and establish new routes to material and device fabrication, modification of TiN properties at elevated temperatures in chemically reactive ambient (e.g. oxidizing and reducing ambient such as thermal-oxidation furnaces, oxygen- and hydrogen-containing plasmas) needs to be investigated.
    Original languageUndefined
    Title of host publicationProceedings of the 9th International conference on Atomic Layer Deposition
    Place of PublicationMadison, USA
    PublisherAmerica Vaccum Society, Omnipress
    Number of pages1
    ISBN (Print)not assigned
    Publication statusPublished - 19 Jul 2009
    Event9th International conference on Atomic Layer Deposition 2009 - Monterey, United States
    Duration: 19 Jul 200922 Jul 2009
    Conference number: 9

    Publication series

    PublisherAmerica Vaccum Society, Omnipress


    Conference9th International conference on Atomic Layer Deposition 2009
    Abbreviated titleALD 2009
    Country/TerritoryUnited States


    • METIS-270295
    • EWI-16071
    • SC-ICF: Integrated Circuit Fabrication
    • IR-71164

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