In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

R.G. Bankras, J. Holleman, Jurriaan Schmitz, Jacobus Marinus Sturm, J.M. Sturm, A. Zinine, Herbert Wormeester, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.
Original languageUndefined
Article number10.1002/cvde.200506433
Pages (from-to)275-280
Number of pages6
JournalChemical vapor deposition
Volume12
Issue number5
DOIs
Publication statusPublished - May 2006

Keywords

  • EWI-8060
  • IR-63656
  • METIS-234199
  • SC-ICF: Integrated Circuit Fabrication

Cite this

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title = "In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process",
abstract = "the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.",
keywords = "EWI-8060, IR-63656, METIS-234199, SC-ICF: Integrated Circuit Fabrication",
author = "R.G. Bankras and J. Holleman and Jurriaan Schmitz and Sturm, {Jacobus Marinus} and J.M. Sturm and A. Zinine and Herbert Wormeester and Bene Poelsema",
year = "2006",
month = "5",
doi = "10.1002/cvde.200506433",
language = "Undefined",
volume = "12",
pages = "275--280",
journal = "Chemical vapor deposition",
issn = "0948-1907",
publisher = "Wiley-VCH Verlag",
number = "5",

}

In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. / Bankras, R.G.; Holleman, J.; Schmitz, Jurriaan; Sturm, Jacobus Marinus; Sturm, J.M.; Zinine, A.; Wormeester, Herbert; Poelsema, Bene.

In: Chemical vapor deposition, Vol. 12, No. 5, 10.1002/cvde.200506433, 05.2006, p. 275-280.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

AU - Bankras, R.G.

AU - Holleman, J.

AU - Schmitz, Jurriaan

AU - Sturm, Jacobus Marinus

AU - Sturm, J.M.

AU - Zinine, A.

AU - Wormeester, Herbert

AU - Poelsema, Bene

PY - 2006/5

Y1 - 2006/5

N2 - the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.

AB - the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.

KW - EWI-8060

KW - IR-63656

KW - METIS-234199

KW - SC-ICF: Integrated Circuit Fabrication

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DO - 10.1002/cvde.200506433

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JO - Chemical vapor deposition

JF - Chemical vapor deposition

SN - 0948-1907

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