Abstract
| Original language | Undefined |
|---|---|
| Article number | 10.1002/cvde.200506433 |
| Pages (from-to) | 275-280 |
| Number of pages | 6 |
| Journal | Chemical vapor deposition |
| Volume | 12 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 2006 |
Keywords
- EWI-8060
- IR-63656
- METIS-234199
- SC-ICF: Integrated Circuit Fabrication
Cite this
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In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. / Bankras, R.G.; Holleman, J.; Schmitz, Jurriaan; Sturm, Jacobus Marinus; Sturm, J.M.; Zinine, A.; Wormeester, Herbert; Poelsema, Bene.
In: Chemical vapor deposition, Vol. 12, No. 5, 10.1002/cvde.200506433, 05.2006, p. 275-280.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process
AU - Bankras, R.G.
AU - Holleman, J.
AU - Schmitz, Jurriaan
AU - Sturm, Jacobus Marinus
AU - Sturm, J.M.
AU - Zinine, A.
AU - Wormeester, Herbert
AU - Poelsema, Bene
PY - 2006/5
Y1 - 2006/5
N2 - the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.
AB - the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.
KW - EWI-8060
KW - IR-63656
KW - METIS-234199
KW - SC-ICF: Integrated Circuit Fabrication
U2 - 10.1002/cvde.200506433
DO - 10.1002/cvde.200506433
M3 - Article
VL - 12
SP - 275
EP - 280
JO - Chemical vapor deposition
JF - Chemical vapor deposition
SN - 0948-1907
IS - 5
M1 - 10.1002/cvde.200506433
ER -