In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

Radko Bankras; Jisk Holleman; Jurriaan Schmitz; Marko Sturm; Andrey Zinine; Herbert Wormeester; Bene Poelsema

doi:10.1002/cvde.200506433

In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

Radko Bankras, Jisk Holleman, Jurriaan Schmitz, Marko Sturm, Andrey Zinine, Herbert Wormeester, Bene Poelsema

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Abstract

the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.

Original language	English
Pages (from-to)	275-280
Number of pages	6
Journal	Chemical vapor deposition
Volume	12
Issue number	5
DOIs	https://doi.org/10.1002/cvde.200506433
Publication status	Published - May 2006

Keywords

SC-ICF: Integrated Circuit Fabrication

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title = "In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process",

abstract = "the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.",

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author = "Radko Bankras and Jisk Holleman and Jurriaan Schmitz and Marko Sturm and Andrey Zinine and Herbert Wormeester and Bene Poelsema",

year = "2006",

month = may,

doi = "10.1002/cvde.200506433",

language = "English",

volume = "12",

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journal = "Chemical vapor deposition",

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TY - JOUR

T1 - In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

AU - Bankras, Radko

AU - Holleman, Jisk

AU - Schmitz, Jurriaan

AU - Sturm, Marko

AU - Zinine, Andrey

AU - Wormeester, Herbert

AU - Poelsema, Bene

PY - 2006/5

Y1 - 2006/5

N2 - the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.

AB - the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O$ as precursors, are presented. The goal of this work is to show the feasibility of using a surface-sensitive analysis technique to study the surface chemistry during ALD. The results show the expected decrease in reflected intensity on deposition of aluminum atoms and a recovery of intensity, attributed to removal of methyl groups from the surface, on exposure to $H_2O$. Growth initiation by TMA exposure, and subsequent growth inhibition are observed. A discrete time model of ALD is used to analyze the measured decay in reflected intensity.

KW - SC-ICF: Integrated Circuit Fabrication

U2 - 10.1002/cvde.200506433

DO - 10.1002/cvde.200506433

M3 - Article

SN - 0948-1907

VL - 12

SP - 275

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JO - Chemical vapor deposition

JF - Chemical vapor deposition

IS - 5

ER -

In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

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