In-Situ RHEED analysis of atomic layer deposition

R.G. Bankras, J. Holleman, Jurriaan Schmitz

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    Abstract

    Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED measurements during atomic layer deposition of Al2O3 on Si(001), using Al(CH3)3 and H2O as precursors. The results show the expected decrease in reflected intensity on deposition of aluminum atoms. Also, a recovery of intensity was observed on exposure to H2O. This recovery is contributed to removal of methyl groups from the surface, resulting in an improvement of surface roughness. Finally, the intensity decay is analysed using a simple growth model.
    Original languageUndefined
    Pages70-75
    Number of pages6
    Publication statusPublished - Nov 2005
    Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
    Duration: 17 Nov 200518 Nov 2005
    Conference number: 8

    Workshop

    Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period17/11/0518/11/05

    Keywords

    • IR-67716
    • aluminum oxide (Al2O3)
    • Atomic layer deposition (ALD)
    • EWI-15511
    • high-k gate dielectrics
    • SC-CICC: Characterization of IC Components

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