In-Situ RHEED analysis of atomic layer deposition

R.G. Bankras; J. Holleman; Jurriaan Schmitz

In-Situ RHEED analysis of atomic layer deposition

R.G. Bankras, J. Holleman, Jurriaan Schmitz

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Abstract

Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED measurements during atomic layer deposition of Al2O3 on Si(001), using Al(CH3)3 and H2O as precursors. The results show the expected decrease in reflected intensity on deposition of aluminum atoms. Also, a recovery of intensity was observed on exposure to H2O. This recovery is contributed to removal of methyl groups from the surface, resulting in an improvement of surface roughness. Finally, the intensity decay is analysed using a simple growth model.

Original language	Undefined
Pages	70-75
Number of pages	6
Publication status	Published - Nov 2005
Event	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8

Workshop

Workshop	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	17/11/05 → 18/11/05

Keywords

IR-67716
aluminum oxide (Al2O3)
Atomic layer deposition (ALD)
EWI-15511
high-k gate dielectrics
SC-CICC: Characterization of IC Components

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15511/01/bankras.pdf

Cite this

@conference{b31c8b27af08434c8d634947a825a97c,

title = "In-Situ RHEED analysis of atomic layer deposition",

abstract = "Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED measurements during atomic layer deposition of Al2O3 on Si(001), using Al(CH3)3 and H2O as precursors. The results show the expected decrease in reflected intensity on deposition of aluminum atoms. Also, a recovery of intensity was observed on exposure to H2O. This recovery is contributed to removal of methyl groups from the surface, resulting in an improvement of surface roughness. Finally, the intensity decay is analysed using a simple growth model.",

keywords = "IR-67716, aluminum oxide (Al2O3), Atomic layer deposition (ALD), EWI-15511, high-k gate dielectrics, SC-CICC: Characterization of IC Components",

author = "R.G. Bankras and J. Holleman and Jurriaan Schmitz",

year = "2005",

month = nov,

language = "Undefined",

pages = "70--75",

note = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 ; Conference date: 17-11-2005 Through 18-11-2005",

}

TY - CONF

T1 - In-Situ RHEED analysis of atomic layer deposition

AU - Bankras, R.G.

AU - Holleman, J.

AU - Schmitz, Jurriaan

N1 - Conference code: 8

PY - 2005/11

Y1 - 2005/11

N2 - Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED measurements during atomic layer deposition of Al2O3 on Si(001), using Al(CH3)3 and H2O as precursors. The results show the expected decrease in reflected intensity on deposition of aluminum atoms. Also, a recovery of intensity was observed on exposure to H2O. This recovery is contributed to removal of methyl groups from the surface, resulting in an improvement of surface roughness. Finally, the intensity decay is analysed using a simple growth model.

AB - Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED measurements during atomic layer deposition of Al2O3 on Si(001), using Al(CH3)3 and H2O as precursors. The results show the expected decrease in reflected intensity on deposition of aluminum atoms. Also, a recovery of intensity was observed on exposure to H2O. This recovery is contributed to removal of methyl groups from the surface, resulting in an improvement of surface roughness. Finally, the intensity decay is analysed using a simple growth model.

KW - IR-67716

KW - aluminum oxide (Al2O3)

KW - Atomic layer deposition (ALD)

KW - EWI-15511

KW - high-k gate dielectrics

KW - SC-CICC: Characterization of IC Components

M3 - Paper

SP - 70

EP - 75

T2 - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

Y2 - 17 November 2005 through 18 November 2005

ER -