In-situ RHEED Analysis of Atomic Layer Deposition and Characterization of AL203 Gate Dielectrics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of Semiconductor Advances for Future Electronics SAFE 2003
Pages	-
Publication status	Published - 25 Nov 2003

Keywords

@inproceedings{f772616dc1aa4982a82b29fb3b5310aa,

title = "In-situ RHEED Analysis of Atomic Layer Deposition and Characterization of AL203 Gate Dielectrics",

keywords = "METIS-213254",

author = "R.G. Bankras and Aarnink, {Antonius A.I.} and J. Holleman and Jurriaan Schmitz",

year = "2003",

month = nov,

day = "25",

language = "Undefined",

isbn = "90-73461-39-1",

pages = "--",

booktitle = "Proceedings of Semiconductor Advances for Future Electronics SAFE 2003",

}

TY - GEN

T1 - In-situ RHEED Analysis of Atomic Layer Deposition and Characterization of AL203 Gate Dielectrics

AU - Bankras, R.G.

AU - Aarnink, Antonius A.I.

AU - Holleman, J.

AU - Schmitz, Jurriaan

PY - 2003/11/25

Y1 - 2003/11/25

KW - METIS-213254

M3 - Conference contribution

SN - 90-73461-39-1

SP - -

BT - Proceedings of Semiconductor Advances for Future Electronics SAFE 2003

ER -