In-situ RHEED analysis of atomic layer deposition and characterization of Al203 gate dielectrics

R.G. Bankras; Antonius A.I. Aarnink; J. Holleman; Jurriaan Schmitz

In-situ RHEED analysis of atomic layer deposition and characterization of Al₂0₃ gate dielectrics

R.G. Bankras, Antonius A.I. Aarnink, J. Holleman, Jurriaan Schmitz

Research output: Contribution to conference › Paper

Abstract

A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.

Original language	Undefined
Pages	726-729
Number of pages	4
Publication status	Published - 25 Nov 2003
Event	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6

Conference

Conference	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

Keywords

IR-67738
EWI-15561

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15561/01/bankras.pdf

Cite this

Bankras, R. G., Aarnink, A. A. I., Holleman, J., & Schmitz, J. (2003). In-situ RHEED analysis of atomic layer deposition and characterization of Al₂0₃ gate dielectrics. 726-729. Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands. http://eprints.eemcs.utwente.nl/secure2/15561/01/bankras.pdf

@conference{60b3e215815145e8aaa79305e9c22186,

title = "In-situ RHEED analysis of atomic layer deposition and characterization of Al203 gate dielectrics",

abstract = "A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.",

keywords = "IR-67738, EWI-15561",

author = "R.G. Bankras and Aarnink, {Antonius A.I.} and J. Holleman and Jurriaan Schmitz",

year = "2003",

month = nov,

day = "25",

language = "Undefined",

pages = "726--729",

note = "null ; Conference date: 25-11-2003 Through 26-11-2003",

}

Bankras, RG, Aarnink, AAI, Holleman, J & Schmitz, J 2003, 'In-situ RHEED analysis of atomic layer deposition and characterization of Al₂0₃ gate dielectrics', Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands, 25/11/03 - 26/11/03 pp. 726-729. <http://eprints.eemcs.utwente.nl/secure2/15561/01/bankras.pdf>

TY - CONF

T1 - In-situ RHEED analysis of atomic layer deposition and characterization of Al203 gate dielectrics

AU - Bankras, R.G.

AU - Aarnink, Antonius A.I.

AU - Holleman, J.

AU - Schmitz, Jurriaan

N1 - Conference code: 6

PY - 2003/11/25

Y1 - 2003/11/25

N2 - A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.

AB - A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.

KW - IR-67738

KW - EWI-15561

M3 - Paper

SP - 726

EP - 729

Y2 - 25 November 2003 through 26 November 2003

ER -