A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.
|Number of pages||4|
|Publication status||Published - 25 Nov 2003|
|Event||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands|
Duration: 25 Nov 2003 → 26 Nov 2003
Conference number: 6
|Conference||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003|
|Period||25/11/03 → 26/11/03|