In-situ RHEED analysis of atomic layer deposition and characterization of Al203 gate dielectrics

R.G. Bankras, Antonius A.I. Aarnink, J. Holleman, Jurriaan Schmitz

    Research output: Contribution to conferencePaperAcademic

    Abstract

    A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.
    Original languageUndefined
    Pages726-729
    Number of pages4
    Publication statusPublished - 25 Nov 2003
    Event6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands
    Duration: 25 Nov 200326 Nov 2003
    Conference number: 6

    Conference

    Conference6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period25/11/0326/11/03

    Keywords

    • IR-67738
    • EWI-15561

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