In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Prosper Ngabonziza, Rene Heimbuch, N. de Jong, R.A. Klaassen, M.P. Stehno, M. Snelder, A. Solmaz, S.V. Ramankutty, E. Frantzeskakis, E. van Heumen, Gertjan Koster, M.S. Golden, Henricus J.W. Zandvliet, Alexander Brinkman

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Abstract

Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.
Original languageEnglish
Article number035405
Pages (from-to)035405-
JournalPhysical review B: Condensed matter and materials physics
Volume92
Issue number035405
DOIs
Publication statusPublished - 2015

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Photoelectron spectroscopy
Fermi level
insulators
Spectroscopy
Thin films
Defects
defects
Surface states
photoelectric emission
thin films
Molecular beam epitaxy
Band structure
spectroscopy
Surface morphology
Oxygen
Scanning
X rays
Substrates
molecular beam epitaxy
scanning

Keywords

  • IR-97774
  • METIS-312318

Cite this

Ngabonziza, Prosper ; Heimbuch, Rene ; de Jong, N. ; Klaassen, R.A. ; Stehno, M.P. ; Snelder, M. ; Solmaz, A. ; Ramankutty, S.V. ; Frantzeskakis, E. ; van Heumen, E. ; Koster, Gertjan ; Golden, M.S. ; Zandvliet, Henricus J.W. ; Brinkman, Alexander. / In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects. In: Physical review B: Condensed matter and materials physics. 2015 ; Vol. 92, No. 035405. pp. 035405-.
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abstract = "Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.",
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author = "Prosper Ngabonziza and Rene Heimbuch and {de Jong}, N. and R.A. Klaassen and M.P. Stehno and M. Snelder and A. Solmaz and S.V. Ramankutty and E. Frantzeskakis and {van Heumen}, E. and Gertjan Koster and M.S. Golden and Zandvliet, {Henricus J.W.} and Alexander Brinkman",
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Ngabonziza, P, Heimbuch, R, de Jong, N, Klaassen, RA, Stehno, MP, Snelder, M, Solmaz, A, Ramankutty, SV, Frantzeskakis, E, van Heumen, E, Koster, G, Golden, MS, Zandvliet, HJW & Brinkman, A 2015, 'In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects' Physical review B: Condensed matter and materials physics, vol. 92, no. 035405, 035405, pp. 035405-. https://doi.org/10.1103/PhysRevB.92.035405

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects. / Ngabonziza, Prosper; Heimbuch, Rene; de Jong, N.; Klaassen, R.A.; Stehno, M.P.; Snelder, M.; Solmaz, A.; Ramankutty, S.V.; Frantzeskakis, E.; van Heumen, E.; Koster, Gertjan; Golden, M.S.; Zandvliet, Henricus J.W.; Brinkman, Alexander.

In: Physical review B: Condensed matter and materials physics, Vol. 92, No. 035405, 035405, 2015, p. 035405-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

AU - Ngabonziza, Prosper

AU - Heimbuch, Rene

AU - de Jong, N.

AU - Klaassen, R.A.

AU - Stehno, M.P.

AU - Snelder, M.

AU - Solmaz, A.

AU - Ramankutty, S.V.

AU - Frantzeskakis, E.

AU - van Heumen, E.

AU - Koster, Gertjan

AU - Golden, M.S.

AU - Zandvliet, Henricus J.W.

AU - Brinkman, Alexander

PY - 2015

Y1 - 2015

N2 - Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

AB - Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

KW - IR-97774

KW - METIS-312318

U2 - 10.1103/PhysRevB.92.035405

DO - 10.1103/PhysRevB.92.035405

M3 - Article

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SP - 035405-

JO - Physical review B: Condensed matter and materials physics

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SN - 1098-0121

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