In-situ studies of silicide formation during growth of molybdenum-silicon interfaces

Johan Reinink*, Andrey Zameshin, Robbert W.E. van de Kruijs, F. Bijkerk

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

14 Downloads (Pure)

Abstract

The growth development of nanometer thick Mo and Si layers was studied using in situ laser deflection and Low Energy Ion Scattering (LEIS). The growth stress obtained from changes in wafer curvature during growth is correlated to changes in the surface stochiometry monitored by LEIS. For Si on Mo, the compressive-tensile-compressive stress development could be explained by the formation of interfacial silicide compounds and the transition between these and the bulk growth of Si. For Mo on Si, a strong initial tensile stress due to silicide formation saturates upon reduced availability of free Si at the growing Mo surface, followed by a near instantaneous tensile increase in stress related to the amorphous-to-crystalline phase transition, which coincides with the end of the compound formation, as determined with LEIS.
Original languageEnglish
Article number135304
JournalJournal of applied physics
Volume126
Issue number13
DOIs
Publication statusPublished - 7 Oct 2019

Fingerprint

molybdenum
ion scattering
silicon
tensile stress
availability
energy
deflection
curvature
wafers
lasers

Cite this

@article{a658b7d18dfa4530b7331d01b4c78fee,
title = "In-situ studies of silicide formation during growth of molybdenum-silicon interfaces",
abstract = "The growth development of nanometer thick Mo and Si layers was studied using in situ laser deflection and Low Energy Ion Scattering (LEIS). The growth stress obtained from changes in wafer curvature during growth is correlated to changes in the surface stochiometry monitored by LEIS. For Si on Mo, the compressive-tensile-compressive stress development could be explained by the formation of interfacial silicide compounds and the transition between these and the bulk growth of Si. For Mo on Si, a strong initial tensile stress due to silicide formation saturates upon reduced availability of free Si at the growing Mo surface, followed by a near instantaneous tensile increase in stress related to the amorphous-to-crystalline phase transition, which coincides with the end of the compound formation, as determined with LEIS.",
author = "Johan Reinink and Andrey Zameshin and {van de Kruijs}, {Robbert W.E.} and F. Bijkerk",
year = "2019",
month = "10",
day = "7",
doi = "10.1063/1.5092876",
language = "English",
volume = "126",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "13",

}

In-situ studies of silicide formation during growth of molybdenum-silicon interfaces. / Reinink, Johan ; Zameshin, Andrey ; van de Kruijs, Robbert W.E.; Bijkerk, F.

In: Journal of applied physics, Vol. 126, No. 13, 135304, 07.10.2019.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - In-situ studies of silicide formation during growth of molybdenum-silicon interfaces

AU - Reinink, Johan

AU - Zameshin, Andrey

AU - van de Kruijs, Robbert W.E.

AU - Bijkerk, F.

PY - 2019/10/7

Y1 - 2019/10/7

N2 - The growth development of nanometer thick Mo and Si layers was studied using in situ laser deflection and Low Energy Ion Scattering (LEIS). The growth stress obtained from changes in wafer curvature during growth is correlated to changes in the surface stochiometry monitored by LEIS. For Si on Mo, the compressive-tensile-compressive stress development could be explained by the formation of interfacial silicide compounds and the transition between these and the bulk growth of Si. For Mo on Si, a strong initial tensile stress due to silicide formation saturates upon reduced availability of free Si at the growing Mo surface, followed by a near instantaneous tensile increase in stress related to the amorphous-to-crystalline phase transition, which coincides with the end of the compound formation, as determined with LEIS.

AB - The growth development of nanometer thick Mo and Si layers was studied using in situ laser deflection and Low Energy Ion Scattering (LEIS). The growth stress obtained from changes in wafer curvature during growth is correlated to changes in the surface stochiometry monitored by LEIS. For Si on Mo, the compressive-tensile-compressive stress development could be explained by the formation of interfacial silicide compounds and the transition between these and the bulk growth of Si. For Mo on Si, a strong initial tensile stress due to silicide formation saturates upon reduced availability of free Si at the growing Mo surface, followed by a near instantaneous tensile increase in stress related to the amorphous-to-crystalline phase transition, which coincides with the end of the compound formation, as determined with LEIS.

UR - http://www.scopus.com/inward/record.url?scp=85073049110&partnerID=8YFLogxK

U2 - 10.1063/1.5092876

DO - 10.1063/1.5092876

M3 - Article

VL - 126

JO - Journal of applied physics

JF - Journal of applied physics

SN - 0021-8979

IS - 13

M1 - 135304

ER -