In-situ study of the diffusion-reaction mechanism in nanometer scale layered films

S. Bruijn*, R.W.E. van de Kruijs, A.E. Yakshin, F. Bijkerk

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)
5 Downloads (Pure)

Abstract

We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100–275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV.
Original languageEnglish
Pages (from-to)2707-2711
Number of pages5
JournalApplied surface science
Volume257
Issue number7
DOIs
Publication statusPublished - 2011

Keywords

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