In-situ study of the diffusion-reaction mechanism in nanometer scale layered films

S. Bruijn; Robbert Wilhelmus Elisabeth van de Kruijs; Andrey Yakshin; Frederik Bijkerk

doi:10.1016/j.apsusc.2010.10.049

In-situ study of the diffusion-reaction mechanism in nanometer scale layered films

S. Bruijn, Robbert Wilhelmus Elisabeth van de Kruijs, Andrey Yakshin, Frederik Bijkerk

Research output: Contribution to journal › Article › Academic › peer-review

15 Citations (Scopus)

Abstract

We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100–275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV.

Original language	English
Pages (from-to)	2707-2711
Number of pages	5
Journal	Applied surface science
Volume	257
Issue number	7
DOIs	https://doi.org/10.1016/j.apsusc.2010.10.049
Publication status	Published - 2011

Keywords

IR-104450
METIS-277874

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title = "In-situ study of the diffusion-reaction mechanism in nanometer scale layered films",

abstract = "We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100–275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV.",

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T1 - In-situ study of the diffusion-reaction mechanism in nanometer scale layered films

AU - Bruijn, S.

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Yakshin, Andrey

AU - Bijkerk, Frederik

PY - 2011

Y1 - 2011

N2 - We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100–275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV.

AB - We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100–275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV.

KW - IR-104450

KW - METIS-277874

U2 - 10.1016/j.apsusc.2010.10.049

DO - 10.1016/j.apsusc.2010.10.049

M3 - Article

VL - 257

SP - 2707

EP - 2711

JO - Applied surface science

JF - Applied surface science

SN - 0169-4332

IS - 7

ER -