InAs Electron-Hole Bilayer LED

Gaurav Gupta, Florian Mema, Ray Hueting

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

We report a novel switched-mode light-emitting device (LED) in an undoped ultra-thin body (UTB) InAs channel based on the electrostatically induced electron-hole (EH) bilayer concept. The induced EH channels at their respective gate interfaces, which remain spatially separated in steady state, gradually diffuse and recombine during a switch-off transient. Using TCAD simulations, we show that continuous switching of the gates with a ~ 12 µs time period leads to radiative recombination of the induced charge carriers with a peak internal quantum efficiency (IQE) as high as ~ 92%. The proposed concept obviates the need for chemically doped p-n junctions in the UTB device for light emitting applications and could also be employed for other direct bandgap semiconductors. However, the switching speed is ultimately limited by the thermal generation time.
Original languageEnglish
Title of host publication2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
PublisherIEEE and IEEE Electron Device Society
ISBN (Electronic)978-1-7281-1658-7
DOIs
Publication statusPublished - 19 Mar 2020
EventJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France
Duration: 1 Apr 20193 Apr 2019

Conference

ConferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Abbreviated titleEUROSOI-ULIS 2019
CountryFrance
CityGrenoble
Period1/04/193/04/19

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