InAs Electron-Hole Bilayer LED

Gaurav  Gupta; Florian Mema; Ray Hueting

doi:10.1109/EUROSOI-ULIS45800.2019.9041897

InAs Electron-Hole Bilayer LED

Gaurav Gupta
, Florian Mema
, Ray Hueting

Integrated Devices and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

103 Downloads (Pure)

Abstract

We report a novel switched-mode light-emitting device (LED) in an undoped ultra-thin body (UTB) InAs channel based on the electrostatically induced electron-hole (EH) bilayer concept. The induced EH channels at their respective gate interfaces, which remain spatially separated in steady state, gradually diffuse and recombine during a switch-off transient. Using TCAD simulations, we show that continuous switching of the gates with a ~ 12 µs time period leads to radiative recombination of the induced charge carriers with a peak internal quantum efficiency (IQE) as high as ~ 92%. The proposed concept obviates the need for chemically doped p-n junctions in the UTB device for light emitting applications and could also be employed for other direct bandgap semiconductors. However, the switching speed is ultimately limited by the thermal generation time.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Publisher	IEEE
ISBN (Electronic)	978-1-7281-1658-7
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041897
Publication status	Published - 19 Mar 2020
Event	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 1 Apr 2019 → 3 Apr 2019

Conference

Conference	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Abbreviated title	EUROSOI-ULIS 2019
Country/Territory	France
City	Grenoble
Period	1/04/19 → 3/04/19

Keywords

22/3 OA procedure

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10.1109/EUROSOI-ULIS45800.2019.9041897

10.1109_EUROSOI-ULIS45800.2019.9041897Final published version, 893 KBLicence: Taverne

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@inproceedings{ba50eb30425e45958d0a7fdbb96d25e1,

title = "InAs Electron-Hole Bilayer LED",

abstract = "We report a novel switched-mode light-emitting device (LED) in an undoped ultra-thin body (UTB) InAs channel based on the electrostatically induced electron-hole (EH) bilayer concept. The induced EH channels at their respective gate interfaces, which remain spatially separated in steady state, gradually diffuse and recombine during a switch-off transient. Using TCAD simulations, we show that continuous switching of the gates with a \textasciitilde{} 12 µs time period leads to radiative recombination of the induced charge carriers with a peak internal quantum efficiency (IQE) as high as \textasciitilde{} 92\%. The proposed concept obviates the need for chemically doped p-n junctions in the UTB device for light emitting applications and could also be employed for other direct bandgap semiconductors. However, the switching speed is ultimately limited by the thermal generation time.",

keywords = "22/3 OA procedure",

author = "Gaurav Gupta and Florian Mema and Ray Hueting",

note = "Funding Information: ACKNOWLEDGMENT The authors acknowledge the partial financial support from the NWO Domain Applied and Engineering Sciences (TTW), The Netherlands (OTP 2014, under Project 13145). The authors would also like to thank J. Schmitz, L.K. Nanver and S. Dutta for fruitful discussions and critically reading this manuscript. Publisher Copyright: {\textcopyright} 2019 IEEE.; Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2020",

month = mar,

day = "19",

doi = "10.1109/EUROSOI-ULIS45800.2019.9041897",

language = "English",

booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)",

publisher = "IEEE",

address = "United States",

}

Gupta, G, Mema, F & Hueting, R 2020, InAs Electron-Hole Bilayer LED. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)., 9041897, IEEE, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 1/04/19. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041897

TY - GEN

T1 - InAs Electron-Hole Bilayer LED

AU - Gupta, Gaurav

AU - Mema, Florian

AU - Hueting, Ray

N1 - Funding Information: ACKNOWLEDGMENT The authors acknowledge the partial financial support from the NWO Domain Applied and Engineering Sciences (TTW), The Netherlands (OTP 2014, under Project 13145). The authors would also like to thank J. Schmitz, L.K. Nanver and S. Dutta for fruitful discussions and critically reading this manuscript. Publisher Copyright: © 2019 IEEE.

PY - 2020/3/19

Y1 - 2020/3/19

N2 - We report a novel switched-mode light-emitting device (LED) in an undoped ultra-thin body (UTB) InAs channel based on the electrostatically induced electron-hole (EH) bilayer concept. The induced EH channels at their respective gate interfaces, which remain spatially separated in steady state, gradually diffuse and recombine during a switch-off transient. Using TCAD simulations, we show that continuous switching of the gates with a ~ 12 µs time period leads to radiative recombination of the induced charge carriers with a peak internal quantum efficiency (IQE) as high as ~ 92%. The proposed concept obviates the need for chemically doped p-n junctions in the UTB device for light emitting applications and could also be employed for other direct bandgap semiconductors. However, the switching speed is ultimately limited by the thermal generation time.

AB - We report a novel switched-mode light-emitting device (LED) in an undoped ultra-thin body (UTB) InAs channel based on the electrostatically induced electron-hole (EH) bilayer concept. The induced EH channels at their respective gate interfaces, which remain spatially separated in steady state, gradually diffuse and recombine during a switch-off transient. Using TCAD simulations, we show that continuous switching of the gates with a ~ 12 µs time period leads to radiative recombination of the induced charge carriers with a peak internal quantum efficiency (IQE) as high as ~ 92%. The proposed concept obviates the need for chemically doped p-n junctions in the UTB device for light emitting applications and could also be employed for other direct bandgap semiconductors. However, the switching speed is ultimately limited by the thermal generation time.

KW - 22/3 OA procedure

U2 - 10.1109/EUROSOI-ULIS45800.2019.9041897

DO - 10.1109/EUROSOI-ULIS45800.2019.9041897

M3 - Conference contribution

BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

PB - IEEE

T2 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Y2 - 1 April 2019 through 3 April 2019

ER -

InAs Electron-Hole Bilayer LED

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