This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.
|Publisher||IEEE Photonics Society|
|Conference||8th International Conference on Group IV Photonics, GFP 2011|
|Period||14/09/11 → 16/09/11|
|Other||14-16 September 2011|