Increased light emission by geometrical changes in Si LEDs

V. Puliyankot Palackavalapil, G. Piccolo, Raymond Josephus Engelbart Hueting, A. Heringa, Alexeij Y. Kovalgin, Jurriaan Schmitz

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    3 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.
    Original languageUndefined
    Title of host publicationProceedings of the 8th International Conference on Group IV Photonics (GFP)
    Place of PublicationUSA
    PublisherIEEE Photonics Society
    Pages287-289
    Number of pages3
    ISBN (Print)978-1-4244-8340-2
    DOIs
    Publication statusPublished - 14 Sep 2011

    Publication series

    Name
    PublisherIEEE Photonics Society

    Keywords

    • METIS-281629
    • EWI-20964
    • IR-78810

    Cite this

    Puliyankot Palackavalapil, V., Piccolo, G., Hueting, R. J. E., Heringa, A., Kovalgin, A. Y., & Schmitz, J. (2011). Increased light emission by geometrical changes in Si LEDs. In Proceedings of the 8th International Conference on Group IV Photonics (GFP) (pp. 287-289). USA: IEEE Photonics Society. https://doi.org/10.1109/GROUP4.2011.6053792