Increased light emission by geometrical changes in Si LEDs

V. Puliyankot Palackavalapil; G. Piccolo; Raymond Josephus Engelbart Hueting; A. Heringa; Alexeij Y. Kovalgin; Jurriaan Schmitz

doi:10.1109/GROUP4.2011.6053792

Increased light emission by geometrical changes in Si LEDs

V. Puliyankot Palackavalapil, G. Piccolo, Raymond Josephus Engelbart Hueting, A. Heringa, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

2 Downloads (Pure)

Abstract

This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.

Original language	Undefined
Title of host publication	Proceedings of the 8th International Conference on Group IV Photonics (GFP)
Place of Publication	USA
Publisher	IEEE
Pages	287-289
Number of pages	3
ISBN (Print)	978-1-4244-8340-2
DOIs	https://doi.org/10.1109/GROUP4.2011.6053792
Publication status	Published - 14 Sept 2011
Event	8th International Conference on Group IV Photonics, GFP 2011 - London, UK Duration: 14 Sept 2011 → 16 Sept 2011

Publication series

Name
Publisher	IEEE Photonics Society

Conference

Conference	8th International Conference on Group IV Photonics, GFP 2011
Period	14/09/11 → 16/09/11
Other	14-16 September 2011

Keywords

METIS-281629
EWI-20964
IR-78810

Access to Document

10.1109/GROUP4.2011.6053792

http://eprints.eemcs.utwente.nl/secure2/20964/01/Puliyankot_IncreasedLightEmission_GIV2011.pdf

Cite this

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title = "Increased light emission by geometrical changes in Si LEDs",

abstract = "This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.",

keywords = "METIS-281629, EWI-20964, IR-78810",

author = "{Puliyankot Palackavalapil}, V. and G. Piccolo and Hueting, {Raymond Josephus Engelbart} and A. Heringa and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",

note = "10.1109/GROUP4.2011.6053792 ; 8th International Conference on Group IV Photonics, GFP 2011 ; Conference date: 14-09-2011 Through 16-09-2011",

year = "2011",

month = sep,

day = "14",

doi = "10.1109/GROUP4.2011.6053792",

language = "Undefined",

isbn = "978-1-4244-8340-2",

publisher = "IEEE",

pages = "287--289",

booktitle = "Proceedings of the 8th International Conference on Group IV Photonics (GFP)",

address = "United States",

}

Puliyankot Palackavalapil, V, Piccolo, G, Hueting, RJE, Heringa, A, Kovalgin, AY & Schmitz, J 2011, Increased light emission by geometrical changes in Si LEDs. in Proceedings of the 8th International Conference on Group IV Photonics (GFP). IEEE, USA, pp. 287-289, 8th International Conference on Group IV Photonics, GFP 2011, 14/09/11. https://doi.org/10.1109/GROUP4.2011.6053792

Increased light emission by geometrical changes in Si LEDs. / Puliyankot Palackavalapil, V.; Piccolo, G.; Hueting, Raymond Josephus Engelbart et al.
Proceedings of the 8th International Conference on Group IV Photonics (GFP). USA: IEEE, 2011. p. 287-289.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Increased light emission by geometrical changes in Si LEDs

AU - Puliyankot Palackavalapil, V.

AU - Piccolo, G.

AU - Hueting, Raymond Josephus Engelbart

AU - Heringa, A.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

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N2 - This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.

AB - This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.

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KW - IR-78810

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BT - Proceedings of the 8th International Conference on Group IV Photonics (GFP)

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