Increased light emission by geometrical changes in Si LEDs

V. Puliyankot Palackavalapil, G. Piccolo, Raymond Josephus Engelbart Hueting, A. Heringa, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    2 Downloads (Pure)


    This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.
    Original languageUndefined
    Title of host publicationProceedings of the 8th International Conference on Group IV Photonics (GFP)
    Place of PublicationUSA
    Number of pages3
    ISBN (Print)978-1-4244-8340-2
    Publication statusPublished - 14 Sept 2011
    Event8th International Conference on Group IV Photonics, GFP 2011 - London, UK
    Duration: 14 Sept 201116 Sept 2011

    Publication series

    PublisherIEEE Photonics Society


    Conference8th International Conference on Group IV Photonics, GFP 2011
    Other14-16 September 2011


    • METIS-281629
    • EWI-20964
    • IR-78810

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