Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

Željko Osrečki*, Tihomir Knežević, Lis K. Nanver, Tomislav Suligoj

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the wafer. The simulation environment is developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness of the highly-doped Si layer. A crosstalk reduction of two orders of magnitude is gained with addition of the PureB/a-Si stack.

    Original languageEnglish
    Title of host publication17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
    Subtitle of host publication 24-28 July 2017, Copenhagen, Denmark
    PublisherIEEE Computer Society
    Pages69-70
    Number of pages2
    ISBN (Electronic)978-1-5090-5323-0
    ISBN (Print)978-1-5090-5324-7
    DOIs
    Publication statusPublished - 11 Aug 2017
    Event17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark
    Duration: 24 Jul 201728 Jul 2017
    Conference number: 17

    Conference

    Conference17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
    Abbreviated titleNUSOD
    CountryDenmark
    CityCopenhagen
    Period24/07/1728/07/17

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    Cite this

    Osrečki, Ž., Knežević, T., Nanver, L. K., & Suligoj, T. (2017). Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays. In 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017: 24-28 July 2017, Copenhagen, Denmark (pp. 69-70). [8009995] IEEE Computer Society. https://doi.org/10.1109/NUSOD.2017.8009995