Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

Željko Osrečki; Tihomir Knežević; Lis K. Nanver; Tomislav Suligoj

doi:10.1109/NUSOD.2017.8009995

Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

Željko Osrečki^*, Tihomir Knežević, Lis K. Nanver, Tomislav Suligoj

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

32 Downloads (Pure)

Abstract

A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×10²⁰ cm^-3) on the backside of the wafer. The simulation environment is developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness of the highly-doped Si layer. A crosstalk reduction of two orders of magnitude is gained with addition of the PureB/a-Si stack.

Original language	English
Title of host publication	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Subtitle of host publication	24-28 July 2017, Copenhagen, Denmark
Publisher	IEEE
Pages	69-70
Number of pages	2
ISBN (Electronic)	978-1-5090-5323-0
ISBN (Print)	978-1-5090-5324-7
DOIs	https://doi.org/10.1109/NUSOD.2017.8009995
Publication status	Published - 11 Aug 2017
Event	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark Duration: 24 Jul 2017 → 28 Jul 2017 Conference number: 17

Conference

Conference	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Abbreviated title	NUSOD
Country/Territory	Denmark
City	Copenhagen
Period	24/07/17 → 28/07/17

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10.1109/NUSOD.2017.8009995

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Osrečki, Ž., Knežević, T., Nanver, L. K., & Suligoj, T. (2017). Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays. In 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017: 24-28 July 2017, Copenhagen, Denmark (pp. 69-70). Article 8009995 IEEE. https://doi.org/10.1109/NUSOD.2017.8009995

@inproceedings{2dde034c9df34608a95ee00f41ba30c3,

title = "Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays",

abstract = "A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the wafer. The simulation environment is developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness of the highly-doped Si layer. A crosstalk reduction of two orders of magnitude is gained with addition of the PureB/a-Si stack.",

author = "{\v Z}eljko Osre{\v c}ki and Tihomir Kne{\v z}evi{\'c} and Nanver, {Lis K.} and Tomislav Suligoj",

year = "2017",

month = aug,

day = "11",

doi = "10.1109/NUSOD.2017.8009995",

language = "English",

isbn = "978-1-5090-5324-7",

pages = "69--70",

booktitle = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017",

publisher = "IEEE",

address = "United States",

note = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, NUSOD ; Conference date: 24-07-2017 Through 28-07-2017",

}

Osrečki, Ž, Knežević, T, Nanver, LK & Suligoj, T 2017, Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays. in 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017: 24-28 July 2017, Copenhagen, Denmark., 8009995, IEEE, pp. 69-70, 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen, Denmark, 24/07/17. https://doi.org/10.1109/NUSOD.2017.8009995

Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays. / Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K. et al.
17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017: 24-28 July 2017, Copenhagen, Denmark. IEEE, 2017. p. 69-70 8009995.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

AU - Osrečki, Željko

AU - Knežević, Tihomir

AU - Nanver, Lis K.

AU - Suligoj, Tomislav

N1 - Conference code: 17

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N2 - A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the wafer. The simulation environment is developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness of the highly-doped Si layer. A crosstalk reduction of two orders of magnitude is gained with addition of the PureB/a-Si stack.

AB - A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the wafer. The simulation environment is developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness of the highly-doped Si layer. A crosstalk reduction of two orders of magnitude is gained with addition of the PureB/a-Si stack.

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BT - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

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ER -

Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

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