Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

Željko Osrečki (Corresponding Author), Tihomir Knežević, Lis K. Nanver, Tomislav Suligoj

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk-reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness and doping of the layer. A crosstalk reduction of 5 orders of magnitude is gained with addition of 1-μm-thick PureB / α -Si stack for the array processed on a p-type substrate, while the same reduction is achieved with a 1-μm-thick highly-doped Si layer (As, 1.1×1020cm-3) for an array processed on an n-type substrate.

Original languageEnglish
Article number152
JournalOptical and quantum electronics
Volume50
Issue number3
DOIs
Publication statusPublished - 1 Mar 2018

Fingerprint

Avalanche diodes
avalanche diodes
Crosstalk
crosstalk
Photons
photons
environment simulation
Optical constants
Substrates
Light absorption
optical absorption
Doping (additives)
wafers
simulation

Keywords

  • UT-Hybrid-D
  • PureB
  • Single-photon avalanche diode (SPAD)
  • SPAD array
  • Indirect optical crosstalk

Cite this

@article{b27f62ac09ca48d3ba70a9fd9231e074,
title = "Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays",
abstract = "A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk-reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness and doping of the layer. A crosstalk reduction of 5 orders of magnitude is gained with addition of 1-μm-thick PureB / α -Si stack for the array processed on a p-type substrate, while the same reduction is achieved with a 1-μm-thick highly-doped Si layer (As, 1.1×1020cm-3) for an array processed on an n-type substrate.",
keywords = "UT-Hybrid-D, PureB, Single-photon avalanche diode (SPAD), SPAD array, Indirect optical crosstalk",
author = "Željko Osrečki and Tihomir Knežević and Nanver, {Lis K.} and Tomislav Suligoj",
note = "Springer deal",
year = "2018",
month = "3",
day = "1",
doi = "10.1007/s11082-018-1415-2",
language = "English",
volume = "50",
journal = "Optical and quantum electronics",
issn = "0306-8919",
publisher = "Springer",
number = "3",

}

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays. / Osrečki, Željko (Corresponding Author); Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav.

In: Optical and quantum electronics, Vol. 50, No. 3, 152, 01.03.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

AU - Osrečki, Željko

AU - Knežević, Tihomir

AU - Nanver, Lis K.

AU - Suligoj, Tomislav

N1 - Springer deal

PY - 2018/3/1

Y1 - 2018/3/1

N2 - A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk-reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness and doping of the layer. A crosstalk reduction of 5 orders of magnitude is gained with addition of 1-μm-thick PureB / α -Si stack for the array processed on a p-type substrate, while the same reduction is achieved with a 1-μm-thick highly-doped Si layer (As, 1.1×1020cm-3) for an array processed on an n-type substrate.

AB - A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk-reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness and doping of the layer. A crosstalk reduction of 5 orders of magnitude is gained with addition of 1-μm-thick PureB / α -Si stack for the array processed on a p-type substrate, while the same reduction is achieved with a 1-μm-thick highly-doped Si layer (As, 1.1×1020cm-3) for an array processed on an n-type substrate.

KW - UT-Hybrid-D

KW - PureB

KW - Single-photon avalanche diode (SPAD)

KW - SPAD array

KW - Indirect optical crosstalk

UR - http://www.scopus.com/inward/record.url?scp=85042934779&partnerID=8YFLogxK

U2 - 10.1007/s11082-018-1415-2

DO - 10.1007/s11082-018-1415-2

M3 - Article

VL - 50

JO - Optical and quantum electronics

JF - Optical and quantum electronics

SN - 0306-8919

IS - 3

M1 - 152

ER -