Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH

Q.D. Nguyen; Michael Curt Elwenspoek

Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH

Q.D. Nguyen, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientations close to (111) indicate that, at these surfaces, etching follows a step mechanism. Additionally it shows a difference in reactivity between monohydride and dihydride terminated steps towards both chemical etching and electrochemical oxidation. Morphology changes have also been observed, in particular on (110) surface, where the macroscopic surface becomes smoother at positive bias.

Original language	Undefined
Title of host publication	16th MicroMechanics Europe Workshop, MME 2005
Place of Publication	Chalmers, UK
Publisher	Chalmers University of Technology
Pages	45-48
Number of pages	4
ISBN (Print)	978-0-4445-1037-2
Publication status	Published - 2005
Event	16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden Duration: 4 Sept 2005 → 6 Sept 2005 Conference number: 16

Publication series

Name
Publisher	Chalmers University of Technology

Workshop

Workshop	16th MicroMechanics Europe Workshop, MME 2005
Abbreviated title	MME
Country/Territory	Sweden
City	Göteborg
Period	4/09/05 → 6/09/05

Keywords

METIS-228537
IR-54402
Anisotropic etching
EWI-19672
Silicon
KOH
Wagon wheel
Electrochemistry

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Cite this

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title = "Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH",

abstract = "The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientations close to (111) indicate that, at these surfaces, etching follows a step mechanism. Additionally it shows a difference in reactivity between monohydride and dihydride terminated steps towards both chemical etching and electrochemical oxidation. Morphology changes have also been observed, in particular on (110) surface, where the macroscopic surface becomes smoother at positive bias.",

keywords = "METIS-228537, IR-54402, Anisotropic etching, EWI-19672, Silicon, KOH, Wagon wheel, Electrochemistry",

author = "Q.D. Nguyen and Elwenspoek, {Michael Curt}",

year = "2005",

language = "Undefined",

isbn = "978-0-4445-1037-2",

publisher = "Chalmers University of Technology",

pages = "45--48",

booktitle = "16th MicroMechanics Europe Workshop, MME 2005",

address = "Sweden",

note = "16th MicroMechanics Europe Workshop, MME 2005 ; Conference date: 04-09-2005 Through 06-09-2005",

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TY - GEN

T1 - Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH

AU - Nguyen, Q.D.

AU - Elwenspoek, Michael Curt

N1 - Conference code: 16

PY - 2005

Y1 - 2005

N2 - The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientations close to (111) indicate that, at these surfaces, etching follows a step mechanism. Additionally it shows a difference in reactivity between monohydride and dihydride terminated steps towards both chemical etching and electrochemical oxidation. Morphology changes have also been observed, in particular on (110) surface, where the macroscopic surface becomes smoother at positive bias.

AB - The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientations close to (111) indicate that, at these surfaces, etching follows a step mechanism. Additionally it shows a difference in reactivity between monohydride and dihydride terminated steps towards both chemical etching and electrochemical oxidation. Morphology changes have also been observed, in particular on (110) surface, where the macroscopic surface becomes smoother at positive bias.

KW - METIS-228537

KW - IR-54402

KW - Anisotropic etching

KW - EWI-19672

KW - Silicon

KW - KOH

KW - Wagon wheel

KW - Electrochemistry

M3 - Conference contribution

SN - 978-0-4445-1037-2

SP - 45

EP - 48

BT - 16th MicroMechanics Europe Workshop, MME 2005

PB - Chalmers University of Technology

CY - Chalmers, UK

T2 - 16th MicroMechanics Europe Workshop, MME 2005

Y2 - 4 September 2005 through 6 September 2005

ER -