Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH

Q.D. Nguyen, Michael Curt Elwenspoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    57 Downloads (Pure)


    The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientations close to (111) indicate that, at these surfaces, etching follows a step mechanism. Additionally it shows a difference in reactivity between monohydride and dihydride terminated steps towards both chemical etching and electrochemical oxidation. Morphology changes have also been observed, in particular on (110) surface, where the macroscopic surface becomes smoother at positive bias.
    Original languageUndefined
    Title of host publication16th MicroMechanics Europe Workshop, MME 2005
    Place of PublicationChalmers, UK
    PublisherChalmers University of Technology
    Number of pages4
    ISBN (Print)978-0-4445-1037-2
    Publication statusPublished - 2005
    Event16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden
    Duration: 4 Sept 20056 Sept 2005
    Conference number: 16

    Publication series

    PublisherChalmers University of Technology


    Workshop16th MicroMechanics Europe Workshop, MME 2005
    Abbreviated titleMME


    • METIS-228537
    • IR-54402
    • Anisotropic etching
    • EWI-19672
    • Silicon
    • KOH
    • Wagon wheel
    • Electrochemistry

    Cite this