Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces

F. Gunkel, Peter Brinks, S. Hoffmann-Eifert, R. Dittmann, Mark Huijben, J.E. Kleibeuker, Gertjan Koster, Augustinus J.H.M. Rijnders

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Abstract

The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950¿K-1100¿K) as a function of ambient oxygen partial pressure (pO2). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O3 substrates. For both structures, the high temperature sheet carrier density nS of the LAO/STO-interface saturates at a value of about 1¿×¿1014¿cm¿2 for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects.
Original languageEnglish
Article number052103
Pages (from-to)052103-1-052103-3
Number of pages3
JournalApplied physics letters
Volume100
Issue number5
DOIs
Publication statusPublished - 2012

Keywords

  • METIS-288494
  • IR-81873

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