Influence of dimer buckling on dimer diffusion: A scanning tunneling microscopy study

J. Huijben; Arie van Houselt; Henricus J.W. Zandvliet; Bene Poelsema

doi:10.1103/PhysRevB.73.073311

Influence of dimer buckling on dimer diffusion: A scanning tunneling microscopy study

J. Huijben, Arie van Houselt, Henricus J.W. Zandvliet, Bene Poelsema

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Abstract

The diffusion of Ge dimers along the substrate dimer rows of Ge(001) has been investigated with scanning tunneling microscopy. The jump frequency of on-top Ge dimers along symmetric dimer rows at room temperature is found to be eight times higher than the diffusion along asymmetric dimer rows (0.36 s–1 versus 0.044 s–1). We ascribe this difference to limitations associated with the rocking motion that a dimer has to perform while diffusing along asymmetric dimer rows.

Original language	English
Article number	073311
Number of pages	3
Journal	Physical review B: Condensed matter and materials physics
Volume	73
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.73.073311
Publication status	Published - 2006

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title = "Influence of dimer buckling on dimer diffusion: A scanning tunneling microscopy study",

abstract = "The diffusion of Ge dimers along the substrate dimer rows of Ge(001) has been investigated with scanning tunneling microscopy. The jump frequency of on-top Ge dimers along symmetric dimer rows at room temperature is found to be eight times higher than the diffusion along asymmetric dimer rows (0.36 s–1 versus 0.044 s–1). We ascribe this difference to limitations associated with the rocking motion that a dimer has to perform while diffusing along asymmetric dimer rows.",

author = "J. Huijben and {van Houselt}, Arie and Zandvliet, {Henricus J.W.} and Bene Poelsema",

year = "2006",

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publisher = "American Physical Society",

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T2 - A scanning tunneling microscopy study

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AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

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N2 - The diffusion of Ge dimers along the substrate dimer rows of Ge(001) has been investigated with scanning tunneling microscopy. The jump frequency of on-top Ge dimers along symmetric dimer rows at room temperature is found to be eight times higher than the diffusion along asymmetric dimer rows (0.36 s–1 versus 0.044 s–1). We ascribe this difference to limitations associated with the rocking motion that a dimer has to perform while diffusing along asymmetric dimer rows.

AB - The diffusion of Ge dimers along the substrate dimer rows of Ge(001) has been investigated with scanning tunneling microscopy. The jump frequency of on-top Ge dimers along symmetric dimer rows at room temperature is found to be eight times higher than the diffusion along asymmetric dimer rows (0.36 s–1 versus 0.044 s–1). We ascribe this difference to limitations associated with the rocking motion that a dimer has to perform while diffusing along asymmetric dimer rows.

U2 - 10.1103/PhysRevB.73.073311

DO - 10.1103/PhysRevB.73.073311

M3 - Article

SN - 1098-0121

VL - 73

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

IS - 7

M1 - 073311

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Influence of dimer buckling on dimer diffusion: A scanning tunneling microscopy study

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