Abstract
The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits
Original language | English |
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Pages (from-to) | 1860-1866 |
Number of pages | 7 |
Journal | IEEE transactions on electron devices |
Volume | 54 |
Issue number | LNCS4549/8 |
DOIs | |
Publication status | Published - 1 Aug 2007 |
Keywords
- Dislocation loops
- Silicon
- optoelectronic devices
- integrated optoelectronics
- light sources
- light-emitting diodes (LEDs)
- Integrated Optics
- semiconductor device fabrication
- semiconductor devices
- EWI-10796
- METIS-241796
- IR-61858
- luminescent devices