Influence of dislocation loops on the near infrared light emission from silicon diodes

T. Hoang; J. Holleman; P. Le Minh; Jurriaan Schmitz; Teimuraz Mchedlidze; Tzanimir Arguirov; Martin Kittler

doi:10.1109/TED.2007.901072

Influence of dislocation loops on the near infrared light emission from silicon diodes

T. Hoang, J. Holleman, P. Le Minh, Jurriaan Schmitz, Teimuraz Mchedlidze, Tzanimir Arguirov, Martin Kittler

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits

Original language	English
Pages (from-to)	1860-1866
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	LNCS4549/8
DOIs	https://doi.org/10.1109/TED.2007.901072
Publication status	Published - 1 Aug 2007

Keywords

Dislocation loops
Silicon
optoelectronic devices
integrated optoelectronics
light sources
light-emitting diodes (LEDs)
Integrated Optics
semiconductor device fabrication
semiconductor devices
EWI-10796
METIS-241796
IR-61858
luminescent devices

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10.1109/TED.2007.901072

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@article{63656be9e5ab47a193565daf3f461dd7,

title = "Influence of dislocation loops on the near infrared light emission from silicon diodes",

abstract = "The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits",

keywords = "Dislocation loops, Silicon, optoelectronic devices, integrated optoelectronics, light sources, light-emitting diodes (LEDs), Integrated Optics, semiconductor device fabrication, semiconductor devices, EWI-10796, METIS-241796, IR-61858, luminescent devices",

author = "T. Hoang and J. Holleman and {Le Minh}, P. and Jurriaan Schmitz and Teimuraz Mchedlidze and Tzanimir Arguirov and Martin Kittler",

year = "2007",

month = aug,

day = "1",

doi = "10.1109/TED.2007.901072",

language = "English",

volume = "54",

pages = "1860--1866",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "LNCS4549/8",

}

Influence of dislocation loops on the near infrared light emission from silicon diodes. / Hoang, T.; Holleman, J.; Le Minh, P.; Schmitz, Jurriaan; Mchedlidze, Teimuraz; Arguirov, Tzanimir; Kittler, Martin.

In: IEEE Transactions on Electron Devices, Vol. 54, No. LNCS4549/8, 01.08.2007, p. 1860-1866.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Influence of dislocation loops on the near infrared light emission from silicon diodes

AU - Hoang, T.

AU - Holleman, J.

AU - Le Minh, P.

AU - Schmitz, Jurriaan

AU - Mchedlidze, Teimuraz

AU - Arguirov, Tzanimir

AU - Kittler, Martin

PY - 2007/8/1

Y1 - 2007/8/1

N2 - The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits

AB - The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits

KW - Dislocation loops

KW - Silicon

KW - optoelectronic devices

KW - integrated optoelectronics

KW - light sources

KW - light-emitting diodes (LEDs)

KW - Integrated Optics

KW - semiconductor device fabrication

KW - semiconductor devices

KW - EWI-10796

KW - METIS-241796

KW - IR-61858

KW - luminescent devices

U2 - 10.1109/TED.2007.901072

DO - 10.1109/TED.2007.901072

M3 - Article

VL - 54

SP - 1860

EP - 1866

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - LNCS4549/8

ER -

Influence of dislocation loops on the near infrared light emission from silicon diodes

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Keywords

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