Influence of dislocation loops on the near infrared light emission from silicon diodes

T. Hoang, J. Holleman, P. Le Minh, Jurriaan Schmitz, Teimuraz Mchedlidze, Tzanimir Arguirov, Martin Kittler

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    Abstract

    The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits
    Original languageEnglish
    Pages (from-to)1860-1866
    Number of pages7
    JournalIEEE transactions on electron devices
    Volume54
    Issue numberLNCS4549/8
    DOIs
    Publication statusPublished - 1 Aug 2007

    Keywords

    • Dislocation loops
    • Silicon
    • optoelectronic devices
    • integrated optoelectronics
    • light sources
    • light-emitting diodes (LEDs)
    • Integrated Optics
    • semiconductor device fabrication
    • semiconductor devices
    • EWI-10796
    • METIS-241796
    • IR-61858
    • luminescent devices

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  • Cite this

    Hoang, T., Holleman, J., Le Minh, P., Schmitz, J., Mchedlidze, T., Arguirov, T., & Kittler, M. (2007). Influence of dislocation loops on the near infrared light emission from silicon diodes. IEEE transactions on electron devices, 54(LNCS4549/8), 1860-1866. https://doi.org/10.1109/TED.2007.901072