Influence of growth conditions on PbZr0.20Ti0.80O3 thin films

Werner Wessels, Anuj Chopra, Gertjan Koster, Guus Rijnders

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Abstract

We report on growth and ferroelectric properties of epitaxial bZr0.20Ti0.80O3 (001) films. Single phase epitaxial films were grown on vicinal SrTiO3 (001) and DyScO3 (110) substrates with a layer of SrRuO3 as bottom electrode by pulsed laser deposition. In order to investigate the influence of oxygen background pressure on microstructure and ferroelectric properties of PZT films, the background pressure for PZT growth was varied from 0.08 mbar O2 to 0.274 mbar O2. The crystal orientation and topography of the films were analysed by X-ray diffraction and atomic force microscopy respectively. The influence of oxygen pressure on microstructure was studied through RHEED during the growth and afterwards investigated by RSM. Further, ferroelectric and piezoelectric properties of these films were investigated macroscopically and microscopically.
Original languageEnglish
Pages161-162
Number of pages2
Publication statusPublished - 24 Jun 2012
EventElectroceramics XIII 2012 - University of Twente, Enschede, Netherlands
Duration: 24 Jun 201227 Jun 2012
Conference number: 13

Conference

ConferenceElectroceramics XIII 2012
CountryNetherlands
CityEnschede
Period24/06/1227/06/12

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