We report on growth and ferroelectric properties of epitaxial bZr0.20Ti0.80O3 (001) films. Single phase epitaxial films were grown on vicinal SrTiO3 (001) and DyScO3 (110) substrates with a layer of SrRuO3 as bottom electrode by pulsed laser deposition. In order to investigate the influence of oxygen background pressure on microstructure and ferroelectric properties of PZT films, the background pressure for PZT growth was varied from 0.08 mbar O2 to 0.274 mbar O2. The crystal orientation and topography of the films were analysed by X-ray diffraction and atomic force microscopy respectively. The influence of oxygen pressure on microstructure was studied through RHEED during the growth and afterwards investigated by RSM. Further, ferroelectric and piezoelectric properties of these films were investigated macroscopically and microscopically.
|Number of pages||2|
|Publication status||Published - 24 Jun 2012|
|Event||Electroceramics XIII 2012 - University of Twente, Enschede, Netherlands|
Duration: 24 Jun 2012 → 27 Jun 2012
Conference number: 13
|Conference||Electroceramics XIII 2012|
|Period||24/06/12 → 27/06/12|