Influence of halo doping profiles on MOS transistor mismatch

P. Andricciola; H. Tuinhout

Influence of halo doping profiles on MOS transistor mismatch

P. Andricciola, H. Tuinhout

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Abstract

Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The analysis is conducted through random dopant fluctuations simulations on both short and long transistors. Parameters such as doping level and lateral diffusion are varied having a huge effect on the transistor mismatch performance. Therefore we show that, by engineering the halos, the matching can be improved significantly even when the devices nominally have the same electrical performances

Original language	Undefined
Pages	55-58
Number of pages	4
Publication status	Published - 26 Nov 2009
Event	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands Duration: 26 Nov 2009 → 27 Nov 2009 Conference number: 12

Conference

Conference	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	26/11/09 → 27/11/09

Keywords

TCAD simulations
EWI-17067
IR-69058
MOS transistors mismatch
Variability
SC-CICC: Characterization of IC Components
halo implants
random dopant fluctuations

Access to Document

http://eprints.eemcs.utwente.nl/secure2/17067/01/andricciola.pdf

Cite this

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title = "Influence of halo doping profiles on MOS transistor mismatch",

abstract = "Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The analysis is conducted through random dopant fluctuations simulations on both short and long transistors. Parameters such as doping level and lateral diffusion are varied having a huge effect on the transistor mismatch performance. Therefore we show that, by engineering the halos, the matching can be improved significantly even when the devices nominally have the same electrical performances",

keywords = "TCAD simulations, EWI-17067, IR-69058, MOS transistors mismatch, Variability, SC-CICC: Characterization of IC Components, halo implants, random dopant fluctuations",

author = "P. Andricciola and H. Tuinhout",

year = "2009",

month = nov,

day = "26",

language = "Undefined",

pages = "55--58",

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TY - CONF

T1 - Influence of halo doping profiles on MOS transistor mismatch

AU - Andricciola, P.

AU - Tuinhout, H.

N1 - Conference code: 12

PY - 2009/11/26

Y1 - 2009/11/26

N2 - Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The analysis is conducted through random dopant fluctuations simulations on both short and long transistors. Parameters such as doping level and lateral diffusion are varied having a huge effect on the transistor mismatch performance. Therefore we show that, by engineering the halos, the matching can be improved significantly even when the devices nominally have the same electrical performances

AB - Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The analysis is conducted through random dopant fluctuations simulations on both short and long transistors. Parameters such as doping level and lateral diffusion are varied having a huge effect on the transistor mismatch performance. Therefore we show that, by engineering the halos, the matching can be improved significantly even when the devices nominally have the same electrical performances

KW - TCAD simulations

KW - EWI-17067

KW - IR-69058

KW - MOS transistors mismatch

KW - Variability

KW - SC-CICC: Characterization of IC Components

KW - halo implants

KW - random dopant fluctuations

M3 - Paper

SP - 55

EP - 58

T2 - 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009

Y2 - 26 November 2009 through 27 November 2009

ER -