Influence of halo doping profiles on MOS transistor mismatch

P. Andricciola, H. Tuinhout

    Research output: Contribution to conferencePaper

    Abstract

    Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The analysis is conducted through random dopant fluctuations simulations on both short and long transistors. Parameters such as doping level and lateral diffusion are varied having a huge effect on the transistor mismatch performance. Therefore we show that, by engineering the halos, the matching can be improved significantly even when the devices nominally have the same electrical performances
    Original languageUndefined
    Pages55-58
    Number of pages4
    Publication statusPublished - 26 Nov 2009
    Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
    Duration: 26 Nov 200927 Nov 2009
    Conference number: 12

    Conference

    Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period26/11/0927/11/09

    Keywords

    • TCAD simulations
    • EWI-17067
    • IR-69058
    • MOS transistors mismatch
    • Variability
    • SC-CICC: Characterization of IC Components
    • halo implants
    • random dopant fluctuations

    Cite this

    Andricciola, P., & Tuinhout, H. (2009). Influence of halo doping profiles on MOS transistor mismatch. 55-58. Paper presented at 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, Veldhoven, Netherlands.