Influence of interface recombination in light emission from lateral Si-based light emitting devices

Phuong Le Minh, Tu Hoang, Jisk Holleman, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    The influence of interface recombination on the electroluminescence profile of a lateral p+/p/n+ light emitting diode fabricated on Silicon On Insulator (SOI) materials has been experimentally investigated. Our device resembles a MOSFET fabricated on SOI, except that the source region has opposite doping to the drain. By controlling the voltage bias at the poly gate on top of active emitting region in association with a bias on the silicon substrate under the active region we were able to diminish the non-radiative recombination component at Si/SiO2 interface and therefore enhance the radiative recombination in the thin film SOI. When the diode is working under constant current condition, we observe an increased light output of ~ 20 % as the gate and/or the substrate are biased negatively. The intensity profile across the device is also strongly influenced. To understand the device thoroughly, the structure has also been simulated showing agreement with experimental results.
    Original languageEnglish
    Title of host publicationScience and Technology of Dielectrics for Active and Passive Photonic Devices
    EditorsP. Masscher, K. Wörhoff, D. Misra
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Pages9-16
    Number of pages8
    ISBN (Print)1-56677-515-9
    DOIs
    Publication statusPublished - 2006
    Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
    Duration: 29 Oct 20063 Nov 2006

    Publication series

    NameECS transactions
    PublisherThe Electrochemical Society Inc.
    Number11
    Volume3
    ISSN (Print)1938-5862

    Conference

    Conference210th Electrochemical Society Meeting, ECS 2006
    Abbreviated titleECS 2006
    CountryMexico
    CityCancún
    Period29/10/063/11/06

    Keywords

    • SC-SBLE: Silicon-based Light Emitters

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  • Cite this

    Le Minh, P., Hoang, T., Holleman, J., & Schmitz, J. (2006). Influence of interface recombination in light emission from lateral Si-based light emitting devices. In P. Masscher, K. Wörhoff, & D. Misra (Eds.), Science and Technology of Dielectrics for Active and Passive Photonic Devices (pp. 9-16). (ECS transactions; Vol. 3, No. 11). Pennington, NJ: The Electrochemical Society Inc.. https://doi.org/10.1149/1.2392915